SPICE MODEL of TPCA8A02-H (Professional+BDSP Model) in SPICE PARK
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SPICE MODEL of TPCA8A02-H (Professional+BDSP Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of TPCA8A02-H (Professional+BDSP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: POWER MOSFET (Professional Model) PART NUMBER: TPCA8A02-H MANUFACTURER: TOSHIBA BODY DIODE SPICE MODEL (Special Model) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 2. Equivalent Circuit D S1 - - + + R2 S R1 10MEG DGD 10M CGD S2 + + - - Q1 S G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 4. Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation 1.000 18.6000 18.8679 1.44 2.000 26.8000 27.0270 0.85 6.000 45.8500 45.8015 -0.11 12.000 63.8200 63.4921 -0.51 24.000 88.1320 87.5912 -0.61 30.000 97.3000 96.4630 -0.86 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 5. Vgs-Id Characteristic Circuit Simulation result 60A 50A 40A 30A 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VGS Evaluation circuit Vsense U1 TPCA8A02-H VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1.000 2.505 2.526 0.854 2.000 2.560 2.571 0.426 6.000 2.683 2.683 0.000 12.000 2.800 2.796 -0.157 24.000 2.960 2.958 -0.061 36.000 3.090 3.085 -0.162 48.000 3.190 3.195 0.166 60.000 3.280 3.293 0.405 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 7. Rds(on) Characteristic Circuit Simulation result 17.0A 13.6A 10.2A 6.8A 3.4A 0A 0V 12.9mV 25.8mV 38.8mV 51.7mV 64.6mV I(Vsense) V_VDS Evaluation circuit Vsense U1 TPCA8A02-H VDS 10Vdc VGS 10Vdc 0 Simulation Result ID = 17A, VGS = 10V Measurement Simulation Error (%) R DS (on) m 3.80 3.80 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 8. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 10n 20n 30n 40n 50n V(W1:3) Time*1mA Evaluation circuit U1 Vsense W1 + I1 - D1 34Adc W Dbreak ION = 0A I2 IOFF = 1mA TD = 0 TPCA8A02-H I2 = 1m VD I1 = 0 24Vdc 0 Simulation Result VDD=24V, ID=34A, Measurement Simulation Error (%) VGS=10V Qgs nC 8.100 8.000 1.250 Qgd nC 4.800 4.761 0.819 Qg nC 36.000 36.039 -0.108 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd (pF) VDS (V) Error(%) Measurement Simulation 0.10 2470.00 2472.00 -0.08 0.20 2280.00 2250.00 1.33 0.50 1930.00 1940.00 -0.51 1.00 1600.00 1610.00 -0.62 2.00 1200.00 1185.00 1.26 5.00 770.00 775.00 -0.64 10.00 512.00 520.00 -1.53 20.00 370.00 372.00 -0.53 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 10. Switching Time Characteristic Circuit Simulation result 14V 12V 10V 8V 6V 4V 2V 0V -2V -4V 4.94us 4.96us 5.00us 5.04us 5.08us 5.12us V(2) V(3)/1.5 Time Evaluation circuit U1 TPCA8A02-H R1 L1 L2 2 3 4.7 30nH 50nH V1 = 0 RL V2 = 20 V1 0.88 TD = 5u R2 TR = 10n TF = 10n 4.7 PW = 10u PER = 10m VDD 15Vdc 0 0 0 0 Simulation Result ID=17A, VDD=15V Measurement Simulation Error(%) VGS=0/10V ton ns 12.000 11.951 0.410 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 11. Output Characteristic Circuit Simulation result 8 5 4.5 100A 10 4 3.0 80A 2.9 60A 2.8 40A 2.7 20A VGS=2.5V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(Vsense) V_VDS Evaluation circuit Vsense U1 TPCA8A02-H VDS 10Vdc VGS 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 12. Forward Current Characteristic Circuit Simulation Result 100A 10A 5.0A 0V 0.2V 0.4V 0.6V 0.8V 1.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc TPCA8A02-H 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 13. Comparison Graph Circuit Simulation Result Simulation Result VSD(V) IDR(A) %Error Measurement Simulation 5.000 0.650 0.652 0.31 10.000 0.710 0.706 -0.56 20.000 0.760 0.762 0.24 50.000 0.840 0.841 0.14 100.000 0.910 0.911 0.07 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 14. Reverse Recovery Characteristics (Body Diode) Circuit Simulation Result 2.0A 1.5A 1.0A 0.5A 0A -0.5A -1.0A -1.5A -2.0A 1.03us 1.04us 1.05us 1.06us 1.07us 1.08us 1.09us 1.10us 1.11us 1.12us 1.13us I(R1) Time Evaluation Circuit R1 7 V1 = -15V PARAMETERS: TF = 85n V2 = 15V TD = 6.5n DTPCA8A02-H U1 TR = 10ns TF = {TF} V1 VPULSE PW = 1us PER = 20us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr 40.70 ns 40.84 ns -0.21 All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
- 15. Reverse Recovery Characteristic (Body Diode) Reference Trr=40.7ns Conditions: di/dt=50A/us All Rights Reserved Copyright (c) Bee Technologies Inc. 2008