SPICE MODEL of TRS12N65D (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS12N65D
MANUFACTURER: TOSHIBA
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R2
100MEG
U1
TRS12N65D
R1
0.01m
V1
0Vdc
0
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
6.0A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.5 0.980 0.974 -0.61 1 1.032 1.033 0.10 2 1.130 1.133 0.27 3 1.220 1.226 0.49 4 1.310 1.316 0.46 5 1.410 1.404 -0.43 6 1.500 1.500 0.00

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V ( R )
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/10u)
10p
100p
1.0n
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 650
V2
0Vdc
R2
100MEG
U1
TRS12N65D
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph Circuit Simulation result
Comparison table
VR (V) Cj (pF) %Error Measurement Simulation 0.1 380.000 370.950 -2.38 1 320.000 319.200 -0.25 10 160.000 153.500 -4.06 20 114.000 108.750 -4.61 50 73.000 70.000 -4.11 100 55.000 53.100 -3.45 200 41.500 43.100 3.86 500 36.000 36.23 0.64

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
V _ V 1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
U1
V1 TRS12N65D
0Vdc
R1
100m
0
R2
1000G
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph Circuit Simulation result
Comparison table
IR (nA) VR (V) %Error Measurement Simulation 10 510.000 504.700 -1.04 100 602.000 603.100 0.18 300 650.000 647.700 -0.35