This document provides a device modeling report for a SiC Schottky Barrier Diode with part number TRS20N65D from manufacturer TOSHIBA. It includes the diode model parameters, circuit configurations used in simulations, and comparison graphs between the simulation results and measurement data for forward current, junction capacitance, and reverse characteristics. The simulations show good agreement with measurements within 2% error.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS20N65D
MANUFACTURER: TOSHIBA
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

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R2
100MEG
U1
TRS20N65D
R1
0.01m
V1
0Vdc
0
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
0A
1A
2A
3A
4A
5A
6A
7A
8A
9A
10A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

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Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.5 0.955 0.956 0.10 1 1.000 1.000 0.00 2 1.070 1.068 -0.19 5 1.240 1.241 0.08 10 1.500 1.500 0.00

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V ( R )
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/10u)
10p
100p
1.0n
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 650
V2
0Vdc
R2
100MEG
U1
TRS20N65D
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

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Comparison Graph Circuit Simulation result
Comparison table
VR (V) Cj (pF) %Error Measurement Simulation 0.1 580.000 565.500 -2.50 1 505.000 513.100 1.60 10 280.000 273.400 -2.36 20 198.000 189.300 -4.39 50 119.000 113.900 -4.29 100 85.000 83.300 -2.00 200 64.600 67.500 4.49 500 57.000 58.4 2.46

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V _ V 1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
U1
V1 TRS20N65D
0Vdc
R1
100m
0
R2
1000G
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

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Comparison Graph Circuit Simulation result
Comparison table
IR (nA) VR (V) %Error Measurement Simulation 10 485.000 478.500 -1.34 100 580.000 581.500 0.26 480 650.000 648.200 -0.28