SPICE MODEL of TRS8E65C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS8E65C
MANUFACTURER: TOSHIBA
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
1

2. Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
IS
N
RS
IKF
CJO
M
VJ
ISR
BV
IBV
TT
EG
Model description
Saturation Current
Emission Coefficient
Series Resistance
High-injection Knee Current
Zero-bias Junction Capacitance
Junction Grading Coefficient
Junction Potential
Recombination Current Saturation Value
Reverse Breakdown Voltage(a positive value)
Reverse Breakdown Current(a positive value)
Transit Time
Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
2

3. Forward Current Characteristics
Circuit Simulation result
8.0A
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V
0.5V
1.0V
1.5V
2.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1
U1
TRS8E65C
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
3

4. Comparison Graph
Circuit Simulation result
Comparison table
VF (V)
IF (A)
Measurement
Simulation
%Error
0.1
0.930
0.928
-0.22
1
1.040
1.044
0.39
2
1.125
1.123
-0.18
4
1.260
1.258
-0.16
6
1.380
1.381
0.07
8
1.500
1.500
0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
4

5. Junction Capacitance Characteristic
Circuit Simulation result
1.0n
100p
10p
100mV
I(V2)/(650V/1u)
1.0V
10V
100V
V(N16610)
Evaluation circuit
V2
0Vdc
V2 = 650
V1 = 0
TD = 0
TR = 1us
TF = 500ns
PW = 100us
PER = 500us
U1
TRS8E65C
V1
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
5

6. Comparison Graph
Circuit Simulation result
Comparison table
CT (pF)
VR(V)
Measurement
Simulation
%Error
0.1
490.000
507.000
3.47
0.2
475.000
486.000
2.32
0.5
450.000
460.500
2.33
1
410.000
425.460
3.77
2
360.000
373.700
3.81
5
277.000
286.000
3.25
10
211.000
217.800
3.22
20
154.000
159.200
3.38
50
98.000
101.900
3.98
100
70.000
72.468
3.53
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
6

7. Reverse Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100V
I(R1)
200V
300V
400V
500V
600V
V_V1
Evaluation circuit
R1
100m
V1
U1
TRS8E65C
0Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
7

8. Comparison Graph
Circuit Simulation result
Comparison table
IR (A)
VR (V)
Measurement
Simulation
%Error
2.00E-09
423.00
402.40
-4.87
1.00E-08
490.00
485.50
-0.92
1.00E-07
590.00
589.40
-0.10
4.00E-07
650.00
650.00
0.00
All Rights Reserved Copyright (C) Bee Technologies Inc. 2013
8