Microelectronics Technology

1. BREAKDOWN VOLTAGE OF SILICON DIOXIDE
(Microelectronics Technology)
Advisor: Prof. Nguyen Đuc Chien
Students: Nguyen Minh - 20132586
Nguyen Van Long -
20132393
Hoang Tuan Linh -
20132263
Hanoi, Oct 21st 2016

2. CONTENTS
1.Thermal SiO2 Properties
2.Review of breakdown of silicon dioxide layer
3.Dielectric strength measurement
4.Time-dependent breakdown voltage
5.Application of Breakdown Voltage
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3. 1. THERMAL SiO2 PROPERTIES
 (1) Excellent Electrical Insulator
 (2) High breakdown Electric Field (>10MV/cm)
 (3) Stable and Reproducible Si/SiO2 Interface
 (4) Conformal oxide growth on exposed Si surface
 (5) Good dissusion mask for common dopants
 (6) Very good etching selectivity between Si and SiO2
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4. II. REVIEW OF BREAKDOWN OF SILICON DIOXIDE LAYER
 Breakdown Voltage
 Breakdown Voltage is defined experimentaily as the
exceeding of a preset current
 2 breakdown measures:
- Fast voltage ramp (dielectric strength)
- Constant voltage wearout
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5. III. DIELECTRIC STRENGTH MEASUREMENT
Dielectric strength = the field at which it
would break down
Itr = the current chosen to define
breakdown
IBD = the current at breakdown
Rsi = resistance in the measurement circuit
tbd = time-to-breakdown
Extrapolation of a plot of tbd versus I to zero
time gave IBD. VBD could be caculated from
this technique via the equation for Fowler-
Nordheim tunneling (log(J/E^2) ~ 1/E):
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6. IV. TIME-DEPENDENT BREAKDOWN VOLTAGE
- Consists of the application of a constant
voltage and measuring the time to
breakdown
- TDDB (Time-Dependent Dielectric
Breakdown)
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7. IV. TIME-DEPENDENT BREAKDOWN VOLTAGE
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8. V. APPLICATION OF BREAKDOWN VOLTAGE
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Variation in EBD with oxide thickness
Breakdown voltage =>
thickness of the SiO2
layer
E = V/d

9. THANKS FOR YOUR LISTENING!
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10. Q&A
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11. III. DIELECTRIC STRENGTH MEASUREMENT
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