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ELECTRICAL CONDUCTIVITY 
Presented by- Bhupender Singh 
13ECE06
CONTENT 
 Electrical conductivity 
Energy Band structures 
Conductor 
Insulator 
 Semiconductors 
 Doping 
Intrinsic semiconductor 
Extrinsic semiconductor 
n-type materials 
p-type materials
ELECTRICAL CONDUCTIVITY 
 Conductivity defines a material’s ability to conduct 
electricity. 
 Electric current can flow easily through a material 
with high conductivity. 
 In order of conductivity: Conductor, semiconductor, 
insulator are comes.
ENERGY BAND STRUCTURES
CONDUCTOR 
valence band only partially 
filled. 
next allowed empty band 
overlaps with it. 
All the atoms jumps to 
conduction band. 
Examples copper, iron.
INSULATOR 
Energy gap is very wide. 
Energy gap in Insulator is 
more than 9 eV 
electricity can’t conduct 
Examples wood, plastic
SEMICONDUCTOR 
 It Lies between insulators and 
conductors are called 
Semiconductor . 
 Examples Si, Ge 
 Energy gap is very small. 
 They are of two types : 
1. INTRINSIC 
2. EXTRINSIC
DOPING 
 A semiconductor , which is in its extremely pure form , is known 
as Intrinsic semiconductor. 
 Germanium and Silicon are most widely used semiconductor. 
 Silicon crystal contribute 4 valence electron. 
 The atoms are bounded by covalent bond.
INTRINSIC SEMICONDUCTOR 
 These are undoped 
semiconductor. 
 It has equal number of 
electrons and holes. 
 These are also called pure 
semiconductors. 
 Ex.=Si, Ga.
EXTRINSIC SEMICONDUCTOR 
 These are doped semiconductors. 
 It has not equal number of electrons and holes. 
 This semiconductor obtained by doping of trivalent and 
pentavalent impurities in a tetravalent semiconductor. 
 These are also known as impure semiconductors.
Extrinsic Semiconductor 
Two types of impurity atoms are added to the 
semiconductor 
Atoms containing 5 
valance electrons 
(Pentavalent impurity 
atoms) 
e.g. P,As,Sb,Bi 
Atoms containing 3 
valance electrons 
(Trivalent impurity atoms) 
e.g. Al,Ga,B,In 
N-type semiconductor P-type semiconductor
N-TYPE MATERIAL 
Donor (n-type) impurities: 
 dopant with 5 valence electrons (e.g. P, As, Sb) 
 four electrons used for covalent bonds with surrounding Si 
atoms, one electron “left over” 
 left over electron needed only small amount of energy to lift it 
into conduction band (0.05ev in Si) 
 “N-type semiconductor”, has conduction electrons, no holes.
P-TYPE MATERIAL 
Acceptor (p-type) impurities: 
 dopant with 3 valence electrons (e.g. B, Al, Ga, In) 
 only 3 of the 4 covalent bonds filled 
 vacancy in the fourth covalent bond hole. 
 “p-type semiconductor”, has mobile holes, very few mobile 
electrons.
Electrical materials
Electrical materials

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Electrical materials

  • 1.
  • 2. ELECTRICAL CONDUCTIVITY Presented by- Bhupender Singh 13ECE06
  • 3. CONTENT  Electrical conductivity Energy Band structures Conductor Insulator  Semiconductors  Doping Intrinsic semiconductor Extrinsic semiconductor n-type materials p-type materials
  • 4. ELECTRICAL CONDUCTIVITY  Conductivity defines a material’s ability to conduct electricity.  Electric current can flow easily through a material with high conductivity.  In order of conductivity: Conductor, semiconductor, insulator are comes.
  • 6. CONDUCTOR valence band only partially filled. next allowed empty band overlaps with it. All the atoms jumps to conduction band. Examples copper, iron.
  • 7. INSULATOR Energy gap is very wide. Energy gap in Insulator is more than 9 eV electricity can’t conduct Examples wood, plastic
  • 8. SEMICONDUCTOR  It Lies between insulators and conductors are called Semiconductor .  Examples Si, Ge  Energy gap is very small.  They are of two types : 1. INTRINSIC 2. EXTRINSIC
  • 9. DOPING  A semiconductor , which is in its extremely pure form , is known as Intrinsic semiconductor.  Germanium and Silicon are most widely used semiconductor.  Silicon crystal contribute 4 valence electron.  The atoms are bounded by covalent bond.
  • 10. INTRINSIC SEMICONDUCTOR  These are undoped semiconductor.  It has equal number of electrons and holes.  These are also called pure semiconductors.  Ex.=Si, Ga.
  • 11. EXTRINSIC SEMICONDUCTOR  These are doped semiconductors.  It has not equal number of electrons and holes.  This semiconductor obtained by doping of trivalent and pentavalent impurities in a tetravalent semiconductor.  These are also known as impure semiconductors.
  • 12. Extrinsic Semiconductor Two types of impurity atoms are added to the semiconductor Atoms containing 5 valance electrons (Pentavalent impurity atoms) e.g. P,As,Sb,Bi Atoms containing 3 valance electrons (Trivalent impurity atoms) e.g. Al,Ga,B,In N-type semiconductor P-type semiconductor
  • 13. N-TYPE MATERIAL Donor (n-type) impurities:  dopant with 5 valence electrons (e.g. P, As, Sb)  four electrons used for covalent bonds with surrounding Si atoms, one electron “left over”  left over electron needed only small amount of energy to lift it into conduction band (0.05ev in Si)  “N-type semiconductor”, has conduction electrons, no holes.
  • 14. P-TYPE MATERIAL Acceptor (p-type) impurities:  dopant with 3 valence electrons (e.g. B, Al, Ga, In)  only 3 of the 4 covalent bonds filled  vacancy in the fourth covalent bond hole.  “p-type semiconductor”, has mobile holes, very few mobile electrons.