2. The Plasma Quest approach for the sputter deposition of thin films is based upon the paradigm of “Remote Generation”. Sputter deposition is a form of physical vapour deposition where ions of a sputter gas are created to form a plasma and these ions are then accelerated into a metallic target using an accelerating bias voltage. The target atoms are then able to scatter in the chamber and some will settle on the substrate to form a thin film coating. In a traditional magnetron deposition system, the plasma is generated from the electric field from the target bias and then amplified by local magnets. The plasma quest approach generates a remote plasma in a side arm adjacent to the deposition chamber referred to as the plasma launch system (PLS). The PLS generates a high density plasma with 1013 ions/cc but crucially, the ion energy is low (<10eV). This differentiates our process from both Ion Beam Source and Magnetron thin film coating systems. Importantly, the ions generated from the PLS cannot sputter any material until the application of a bias on the target, enabling a high degree of control on the deposition variables. The plasma is then amplified and confined by using electromagnets so that there is a high density of ions above the target. 1. HiTUS Technology Overview – Part One

3. When a target bias is applied, typically a few hundred volts, the sputter deposition of the target material occurs. The ions are present over the whole of the target and hence sputtering occurs from the whole of the target, giving rise to the name HiTUS – High Target Utilisation Sputtering. Furthermore, the sputtered atoms have to pass through the plasma to reach the substrate. The atomistic interactions that occur during this phase provide many advantages to the thin film coatings that Plasma Quest deposit. Typically, the HiTUS process is able to achieve highly dense films at high deposition rates with controllable stress, high levels of adhesion at low temperatures. Read advantages for thin film deposition using HiTUS for more information regarding our differentiators. The HiTUS deposition technique is particularly well suited to the deposition of high rate thin film oxides and dielectric films. PQL operates a reactive deposition technique whereby an oxide thin film is deposited from a metallic target by the injection of a sputter gas. The reactive deposition process is very stable due to the full target erosion obtained from the HiTUS process. The reactive gas is injected very close to the substrate and the plasma enhances the interaction of the sputter species with the gas to form the appropriate oxide. This gives rise to very high rate deposition of oxides such as thin film alumina and Hafnia. Additionally, PQL use reactive deposition techniques for a number of transparent conducting oxides (TCO’s) including thin films of Indium tin oxide and aluminium doped zinc oxide. Plasma Quest has developed a number of sputter coating systems to facilitate the HiTUS approach. These range from the small-scale R&D tool the S500 R&D Coater through to the more industrial in-line coater the ILH 550. This is based on the linear geometry for the HiTUS technology. 1. HiTUS Technology Overview – Part Two

6. Flexible Electronics Transparent Conducting Oxides Magnetic Media High Mobility TFTs Photonics & Precision Optics Optical Filters Waveguide Materials Photoluminescence Devices Electroluminescence Devices Barrier Layers Protective & Wear Resistant Alternative to Wet Coatings 4. APPLICATIONS