4. Breaking news
on h-BN !!!
Directbandgap properties and evidence for
ultraviolet lasing of hBN single crystal
K. Watanabe et al. Nature Materials 3, 404 (2004)*
5. Breaking news
on h-BN !!!
Directbandgap properties and evidence for
ultraviolet lasing of hBN single crystal
K. Watanabe et al. Nature Materials 3, 404 (2004)*
Hexagonal boron nitride is an indirect bandgap
semiconductor
G. Cassabois et al., Nature Photonics, 10, 262 (2016)*
*) results from Luminescence measurements
6. Internal quantum yield
50%
ZnO
Direct and indirect excitons with high binding energies in hBN.
L. Schue et al. arXiv preprint arXiv:1803.03766 (2018)
7. Internal quantum yield
Direct and indirect excitons with high binding energies in hBN.
L. Schue et al. arXiv preprint arXiv:1803.03766 (2018)
50%
0.1%
ZnO Diamond
8. Internal quantum yield
15%
0.1%
ZnO DiamondhBN
50%
Direct and indirect excitons with high binding energies in hBN.
L. Schue et al. arXiv preprint arXiv:1803.03766 (2018)
12. Origin of the EELS peaks
Loss function Peaks of L(q, ω) can be put in relation
to interband excitations ( Im[∝ ε(q, ω)])
and plasmon resonances (|ε| 0)≈
Exciton interference in hexagonal boron nitride
L. Sponza, H. Amara, C. Attaccalite, F. Ducastelle, A.
Loiseau
PRB 97 (7), 075121(2017)
Direct Observation of the Lowest Indirect Exciton
State in the Bulk of Hexagonal Boron Nitride
R. Schuster C. Habenicht, M. Ahmad, M. Knupfer, B.
Büchner, PRB 97, 041201 (2018)
13. Origin of the EELS peaks
Exciton interference in hexagonal boron nitride
L. Sponza, H. Amara, C. Attaccalite, F. Ducastelle, A.
Loiseau
PRB 97 (7), 075121(2017)
Loss function Peaks of L(q, ω) can be put in relation
to interband excitations ( Im[∝ ε(q, ω)])
and plasmon resonances (|ε| 0)≈
Direct Observation of the Lowest Indirect Exciton
State in the Bulk of Hexagonal Boron Nitride
R. Schuster C. Habenicht, M. Ahmad, M. Knupfer, B.
Büchner, PRB 97, 041201 (2018)
19. Conclusions
Codes
● Exciton interference in hexagonal boron nitride
L. Sponza, H. Amara, C. Attaccalite, F. Ducastelle, A. Loiseau
Phys. Rev. B 97, 075121 (2017)
● Theory of phonon-assisted luminescence in solids: application to hexagonal boron nitride
E. Cannuccia, B. Monserrat and C. Attaccalite
arXiv preprint arXiv:1807.11797
● Direct and indirect excitons in boron nitride polymorphs: a story of atomic configuration
and electronic correlation
L Sponza, H Amara, C Attaccalite, S Latil, T Galvani, F Paleari, L Wirtz, F. Ducastelle
arXiv preprint arXiv:1806.06201
● Two-photon absorption in two-dimensional materials: The case of hexagonal boron nitride
C. Attaccalite, M Grüning, H Amara, S Latil, F Ducastelle
arXiv preprint arXiv:1803.10959
●
Excitons responsible for luminescence can be probed by EELS
●
We extended luminescence theory to include phonon scattering
and reproduce the luminescence spectra
References
24. Direct Observation of the Lowest Indirect Exciton State in the Bulk
of Hexagonal Boron Nitride
R. Schuster C. Habenicht, M. Ahmad, M. Knupfer, B. Büchner, PRB 97, 041201 (2018)
May we probe indirect nature of hBN
with EELS?