Webinar: Soluções inteligentes para acionamento de MOSFETs/IGBTs com família STDRIVE

Soluções inteligentes
para acionamento de
mosfets/igbts com
familia STDRIVE
Rogerio Bueno

Agenda
1 Introduction
2 Application overview
4
Non-Insulated gate drivers
L649x and STDRIVE601
5 Isolated STGAP2H Drivers
3 Complete portfolio
7 Takeaways
8 Q&A
6 STGAP1A : Driver for eV

Introduction – Why should I use gate
driver ?

Why use Gate drivers ?
Control Unit Power Switches LoadGate Drivers

Applications Overview
HID FANs
Power tools
Industrial
drives
Motor drivers
UPS
Factory automation
Stage
Lighting
Industrial Robot
AC/DC converters
Power supply
High voltage inverters
Home appliances
Induction heatinge-bikes
Compressors
EV/HEV
Solar inverters

Gate Drivers
A future-proof portfolio for a wide range of applications
Single Channel &
low side
TD35, PM88 Series
High-Voltage
Half-Bridge
L638, L639 Series
High-Voltage
Half-Bridge
L649 Series
Galvanic Isolated
STGAP Series
High-Voltage
3-phase
STDRIVE601
SiC & GaN
Drives Series
NEW DRIVERS

Non-Insulated gate drivers
L649x and STDRIVE601

New 600V High-Current Gate Drivers
L6491, L6494, L6498 & STDRIVE601
Powerful, rugged, efficient
• Half-bridge MOSFET & IGBT drivers operate in harsh
industrial environments while maintaining good noise
immunity and low switching losses
• Particularly suited for medium / high C power switches, thanks
to sink/source current up to 4 A
• Integrated Dboot and Comp for fast OCP & OTP
New BCD6s-OFFLINE technology and robust design allow:
• Outstanding ruggedness and immunity to below-ground spikes!
• Device characterized with below-ground spikes down to 100 V!

L6491, L6494, L6498/L
600 V, Up to 4 A gate drivers
KEY APPLICATIONS
• Home appliances
• Factory automation
• Industrial drives
• Induction heating
• Welding
• Power conversion
• 600V, 2.5A
• Integrated Bootstrap Diode
• Single input and SD
• Programmable DT
• SO-14
• 600V, 2.5A
• Dual input with interlocking
• SO-14
• 600V, 2.5A
• Dual input with interlocking
• SO-8
EVAL6494
EVAL6498L
L6494L L6498L L6498
• 600V, 4A
• Dual input with interlocking, SD
• smartSD comparatord for OCP
• Programmable DT
• SO-14
EVAL6491HB
L6491

Main Features
• 4A sink/source, 600V Half-Bridge Driver
• 20V operating supply
• dV/dt immunity ± 50 V/ns, full temp range
• Integrated bootstrap diode
• Comparator for fault protections
• Smart shutdown function
• 3.3 V, 5 V TTL/CMOS inputs
• UVLO on Vcc and Vboot
• Adjustable deadtime
• Interlocking function
• Effective fault protection
• Bill of material reduction
L6491 High Current Half-Bridge Gate Driver

STDRIVE601
KEY APPLICATIONS
• 3-phase Motor driver
• Home appliances
• Industrial drives and Fans
Key benefits & features
High performance
• Up to 600V high voltage rail
• Best In Class for propagation delay 85ns
• 200mA/350mA sink / source driver current capability
• ± 50 V / ns transient immunity
• 3.3 to 5 V TTL/CMOS inputs with hysteresis
• UVLO function
• Compact and simplified layout SO-28 package
• Robustness
• Interlocking and deadtime function
• Integrated bootstrap diode
• Comparator for fast over current protection

STDRIVE601 evaluation
https://www.st.com/content/st_com/en/products/solutions-reference-designs/motor-control-
solutions/industrial-motor-control-solutions/sl-mcimc06303v1.html#2

6KV Galvanic isolated technology enables a wide range of Industrial applications with new specific
products
High Performance designs thanks to fast switching frequency and
high transient immunity ensuring extreme robustness
Ready for SiC adoption with specific products to drive and control the
new revolutionary switches for high power applications
Strength IPs
System Know How
• Leadership in HV drivers
• Leadership in SiC transistors
• Galvanic isolation
• Wide industrial topologies understanding with
ecosystem availability
Our Strength Points

STGAP2Platform
A full 6KV galvanic isolated product family
covering multiple options
Single and Dual channel, IGBT and SiC drive
compact and simplified layout IN SO8W & SO36W package
Galvanic isolation provides robustness between each gate
driving channel and the low voltage control and interface
circuit. Eliminating failures of the optocoupler
Reduced PCB space, simple design. Separate output pins
allow to independently optimize turn-on and turn-off while
Miller Clam function helps protecting against spikes during
fast commutations
Compact and
Flexible
Robust
Easy Design
IGBT drive
▪ STGAP2HS
SiC drive
▪ STGAP2SiCS
Products: Single channels driving IGBT and SiC
STGAP2

STGAP2HS / STGAP2SiCS
6kVpk Galvanic isolated Single channel
Fast Switching Frequency
(Prop. Delay 75s)
Current capability
4A sink / source
Stand by, SD pin, Brake pin,
Thermal shutdown protection
Ecosystem and full support
availability
1.2 kV peak
Max Working isolation Voltage
100 V / ns
Transient Immunity
Extreme robustnessReady for SiC power

Thick oxide transformer isolation
Advanced galvanic isolated, single gate driver
Inductive coupling solution allows to transfer a
logic signal across a galvanic isolation.
A transformer with a thick oxide isolation layer
is integrated into the BCD6s standard
technology platform.
The use of ST BCD (Bipolar, CMOS, DMOS)
technology allows integrating power, advanced
analog, and logic to enhance driving
performance, protection and configurability.

STGAP2HS / SiCS Isolation characteristics
Conform with VDE 0884-11 and UL1577 standards
Parameter Symbol Test Conditions Characteristic Unit
Maximum Working isolation Voltage VIORM 1200 VPEAK
Input to Output test voltage VPR
Method a, Type and sample test
VPR = VIORM × 1.6, tm= 10 s
Partial discharge < 5 pC
1920 VPEAK
Method b, 100% Production test
VPR = VIORM × 1.875, tm = 1 s
Partial discharge < 5 pC
2250 VPEAK
Transient Overvoltage VIOTM Type test; tini = 60 s 6000 VPEAK
Maximum Surge isolation Voltage VIOSM Type test; 6000 VPEAK
isolation Resistance RIO Type test; VIO = 500 V at TS > 109 Ω
Isolation Withstand Voltage VISO 1 min. (type test) 3535/5000 Vrms / PEAK
Isolation Test Voltage VISO,test 1 sec. (100% production) 4242/6000 Vrms / PEAK
Parameter Symbol Value Unit Conditions
Creepage
(Minimum External Tracking)
CPG 8 mm
Measured from input terminals to output
terminals, shortest distance path along body
Comparative Tracking Index
(Tracking Resistance)
CTI ≥ 400 V DIN IEC 112/VDE 0303 Part 1
Isolation group II Material Group (DIN VDE 0110, 1/89, Table1)
Maximum Operating
voltage in application
Isolation Voltage
“UL 1577”
Usually expressed in rms value
Ability of package to avoid arching
The higher, the better
Related to CTI.
Can be I, II, II or IV
The higher, the better
Isolation Voltage Test
“UL 1577”
Done on 100% production
Usually expressed in rms value
Partial Discharge Test
Done on 100% production
Maximum “Temporary overvoltage”
Used in many IEC standards
Usually expressed in peak value

STGAP2HS
6kV Galvanic isolated single channel, 4 A gate driver for IGBT & MOS
Key features & benefits
High performance
• Galvanic isolated up to 6kV
• 4 A sink / source driver current capability
• > 100 V / ns transient immunity
• 3.3 to 5 V TTL/ CMOS inputs with hysteresis
• Propagation delay 75ns
Robustness
• UVLO & Watchdog
• Miller Clamp
• Thermal Protection
Minimum footprint and lightweight
• Compact and simplified layout SO8W package
Maximum flexibility with 2 options
• STGAP2HSM: Separate Outputs option for easy gate driving tuning
• STGAP2HSCM: Miller CLAMP pin option to avoid induced turn-on
KEY APPLICATIONS
• Motor control
• Industrial drives and fans
• DC/ DC converters
• Welding
In production

STGAP2HS
• 3V3 / 5 V logic inputs (logic thresholds 1/3, 2/3 of VDD )
• Up to 26 V supply voltage
• 4 A Sink/Source current capability
• Short propagation delay: 80 ns
• UVLO Function
• Stand-by function
• 100 V/ns CMTI
• High voltage rail up to 1200 V
• Temperature shut-down protection
• Active High & Active Low input pins,
for HW interlocking
• STGAP2HSM: Separated Outputs option
for easy gate driving tuning
• STGAP2HSCM: Miller CLAMP pin option
to avoid induced turn-on
• SO8W Package
6kVpk Galvanic isolated single channel, 4A for MosFET and IGBT
In production

STGAP2HS EVALUATION board
• Suitable for 650V and 1200V Si MOSFETs & IGBTs, SiC MOSFETs
• TO-220 or TO-247 power switches up to 1200 V
• 3.3 or 5 V primary side supply
• Isolated flyback modules in standard SIL package
• Easily configurable output voltage
• +20/0 or +20/-3 V for SiC MOSFETs
• +15/0 or +15/-3 V for standard IGBTs or MOSFETs
• Half-bridge topology, 2x STGAP2HS in SO8W
• Suitable for either separated Outputs and MillerCLAMP variants
EVALSTGAP2HS, EVALSTGAP2HSC
6kVpk Galvanic isolated single and dual drivers, Evaluation boards

CMTI results
CMTI test set-up
Test conditions
• VDD supply voltage = 3.3 / 5 V
• VH supply voltage = 15 V
• G1 = common-mode pulse generator
• VCM = 1500 V, variable dV/dt
test vehicle: EVALSTGAP2SCM
Test equipment
• DPO 7104C 1 GHz Oscilloscope
• IsoVu 1 GHz isolated differential probe
• 4 kV single-ended probe with GND clip
• DC linear power supply (+1500 V)
Tested up to 130 V/ns, no
malfunction observed !
124 V/ns
112 V/ns

watchdog
IN+ OUT
VDDVH
2.2us
VDD UNDERVOLTAGE
• Safe output turn-off
• Watchdog timeout: 2 µs
• Output restore
OUTPUT
RESTORE
OUTPUT
TURN OFF
OUTPUT
TURN OFF
VDD
UNDERVOLTAGE

STGAP2SiCS
6k Galvanic isolated single channel, 4 A gate driver for SiC
Key features & benefits
High performance for SiC
• 4 A sink / source driver current capability
Robustness
• UVLO optimized for SiC
• Miller Clamp
Maximum flexibility with 2 options
• STGAP2SiCS: Separate Outputs option for easy gate driving tuning
• STGAP2SiCSC: Miller CLAMP pin option to avoid induced turn-on
KEY APPLICATIONS
• Motor control
• DC/ DC converters, eCharger
• Welding
In production

STGAP2SiCS
KEY APPLICATIONS
• Motor control
• DC-DC converters
• Welding
High performance for SiC
• 4A sink / source driver current capability
Robustness
• UVLO optimized for SiC
• Miller Clamp
6kVpk Galvanic isolated single channel, 4A gate driver for SiC
In production

Undervoltage Lockout
The new STGAP2SiCS to drive SiC MOSFETs
• UVLO thresholds adjusted according to SiC MOSFET needs
STGAP2SiCS
Min Typ. Max
𝑉𝐻𝐿 𝑂𝑁 𝑉 14.6 15.5 16.4
𝑉𝐻𝐿 𝑂𝐹𝐹 [𝑉] 13.9 14.8 15.7
• Other parameters same as
in case of STGAP2S
✓ Safe operation of SiC
✓ Enough margin to allow
negative 𝑽 𝑮𝑺 𝑶𝑭𝑭
𝑉𝐺𝑆 𝑂𝐹𝐹 = 0 𝑉
𝑉𝐺𝑆 𝑂𝐹𝐹 = −3 𝑉
𝐼𝐷=40𝐴
𝑉𝐷𝑆 = 1.6 𝑉
𝑃 ≈ 64 𝑊
𝑃 ≈ 28, 32 𝑊
UVLO is based on
absolute voltage 𝑽 𝑯𝑳

SiC MOSFET
Dynamics: Advantages of Active Miller Clamp
Positive Glitch
-15
-10
-5
0
5
10
15
20
2.11E-05 2.13E-05 2.15E-05 2.17E-05 2.19E-05 2.21E-05
Vgs[V]
Time [sec]
Vgs with S-OUT
Vgs with AMC
driver configuration
▪ S-Out: separated output (no Miller Clamp)
▪ AMC: Active Miller Clamp
𝑽 𝑮𝑯 = 𝟏𝟖 𝑽
𝑽 𝑮𝑳 = −𝟓 𝑽
SCTW35N65G2V
55 mΩ, 650 V SiC MOSFET
Active Miller Clamp is recommended for SiC MOSFETs in bridge toplogies
-15
-10
-5
0
5
10
15
20
1.96E-05 1.97E-05 1.98E-05 1.99E-05 2.00E-05 2.01E-05 2.02E-05 2.03E-05Vgs[V]
Time [sec]
Vgs off with AMC
Vgs off with S-OUT
Negative Glitch
Q1 Turned on Q1 Turned off
Q2
Q1
Example: Half-Bridge
Current flow

SiC MOSFET
Extended Vgs max ratings for safe switching
ST Offers highest negative 𝑉𝐺𝑆 ⇨ high margin
-10
-5
0
5
10
15
20
1.94E-05 1.96E-05 1.98E-05 2.00E-05 2.02E-05 2.04E-05
Vgs[V]
Time [sec]
Vgs_off=-5V
Vgs_off=-2.5V
Vgs_off=0V
Positive Glitch
-10
-5
0
5
10
15
20
1.96E-05 1.98E-05 2.00E-05 2.02E-05 2.04E-05
Vgs[V]
Time [sec]
Vgs_off=-2.5V
Vgs_off=-5V
Vgs_off=0V
Negative Glitch
SCTW35N65G2V
55 mΩ, 650 V SiC MOSFET
A range of 𝑉𝐺𝐿 can be suggested
⇨ application dependent!
Q1 Turned off Q1 Turned off
Q2
Q1
Example: Half-Bridge
Current flow

STGAP1AS - Advanced Isolated Gate Driver
AEC-Q100 grade 1 Qualified
Wide operating range (-40°C -125°C)
SO24W
Advanced single driver perfect for High-End applications
High performance
• Up to 1500V high voltage rail
• 4kV isolation Voltage
• 5A sink / source driver current capability
• ± 50 V / ns transient immunity
• SPI programmability
• Desaturation detection
• Active Miller and Vce clamping
• Overall input/output propagation delay:100ns
Robustness
• Diagnostic status output
• Fully protected (overcurrent detection, Temp. detection
and shutdown protection,UVLO,prog. deadtime..)
• Asynchronous stop command
• 2-level turn off
WW TOP SELLER for EV
TRACTION INVERTER

Output stage features highlights
STGAP1AS- Galvanic Isolated Gate Driver
Embedded features save external components, increasing reliability and ensuring better performances
• VCE active clamping protection
• Prevent transistor break-down
• Programmable desaturation detection
• Recognize short-circuit
• Active Miller Clamp function
• Avoid induced turn-on phenomenon
• Configurable 2-level turn-off
• Limit overvoltage spikes during turn-off
at high currents
• Comparator with programmable
reference
• Overcurrent protection sensing

Takeaways
STDRIVE – Family of ST gate drivers,
insulated and non-insulated versions
STGAP2 – Insulated ST gate drivers
ST649x/STDRIVE601– new ST
products extremely rugged which perfect fits to
industrial applications.

Questions & Answers
stmicroelectronics.brasil@st.com

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The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics
group of companies. All other names are the property of their respective owners.
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Webinar: Soluções inteligentes para acionamento de MOSFETs/IGBTs com família STDRIVE

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