1. BASICS OF DEVICE FABRICATION Gaston, Jeffrey Olanday, Kevin Patrick Pablo, Dominic Rama, Noel Jazz Samonte, Francis Villarante, Clarice Anne

2. Crystal Growth

5. Main Categories of Crystal Growth Methods

10. Wafer Preparation

11. The metal ingots are wax-mounted to a graphite beam and sawed into individual wafers with the use an automatic inner diameter blade saw.

12. The wafers are then dismounted from the wax and graphite beam to prepare for cleaning

13. After cleaning, the wafers are wax-mounted to a lapping machine . After lapping, the wafers are dismounted on a hot plate, rinsed in a soap solution, and wiped dry.

14. Finally, the wafers are physically mounted to a mechanical polishing machine, and polished using a slurry.

20. Two Types of Furnaces

27. Three Primary Exposure Methods

36. Typical Diffusion System It consists of a Heating Element, a Diffusion Tube, a Diffusion Boat, and a Dopant Delivery System.

41. Ion Source - where ions of the desired element are produced. Accelerator - where the ions are electrostatically accelerated to a high energy. Target Chamber - where the ions impinge on a target. Ion Implanter Major Parts: Stopping power - described as the energy loss of the ion per unit path length of the ion. Annealing - needed to repair the lattice damage

42. Ion Implantation Setup with Mass Separator

53. Step 1: Vaporization and Transport of

63. Wafer Evaluation