Fabrication and characterization of one-dimensional solid-state model systems on silicon
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![2 nm
dim
er row
[110]
[110]
Buckled c(4×2)
Flip-flop (2×1)
Silicon (001)
Buckled c(4×2)
Flip-flop (2×1)
SideviewTopviewSideviewTopview](https://image.slidesharecdn.com/francoisbiancothesispresentationnosupplinfo-130625071144-phpapp02/75/fabrication-and-characterization-of-onedimensional-solidstate-model-systems-on-silicon-27-2048.jpg?cb=1669825550)
![X-Ray Photospectroscopy
Binding energy [eV]
[Electroncounts/s]
O C B O
Si Si
Si
Si
Si
Clean Si monocrystal](https://image.slidesharecdn.com/francoisbiancothesispresentationnosupplinfo-130625071144-phpapp02/75/fabrication-and-characterization-of-onedimensional-solidstate-model-systems-on-silicon-48-2048.jpg?cb=1669825550)
![X-Ray Photospectroscopy
Binding energy [eV]
[Electroncounts/s]
O C B O
Si Si
Si
Si
Si
Clean Si monocrystal
Bi
Bi
Bi
Bi
Bi-exposed sample before H exposure
Bi](https://image.slidesharecdn.com/francoisbiancothesispresentationnosupplinfo-130625071144-phpapp02/75/fabrication-and-characterization-of-onedimensional-solidstate-model-systems-on-silicon-49-2048.jpg?cb=1669825550)
![X-Ray Photospectroscopy
Binding energy [eV]
[Electroncounts/s]
O C B O
Si Si
Si
Si
Si
Clean Si monocrystal
Bi
Bi
Bi
Bi
Bi-exposed sample before H exposure
Bi
Bi-exposed sample after H exposure](https://image.slidesharecdn.com/francoisbiancothesispresentationnosupplinfo-130625071144-phpapp02/75/fabrication-and-characterization-of-onedimensional-solidstate-model-systems-on-silicon-50-2048.jpg?cb=1669825550)
![X-Ray Photospectroscopy
Binding energy [eV]
[Electroncounts/s]
O C B O
Si Si
Si
Si
Si
Clean Si monocrystal
Bi
Bi
Bi
Bi
Bi-exposed sample before H exposure
Bi
Bi-exposed sample after H exposure](https://image.slidesharecdn.com/francoisbiancothesispresentationnosupplinfo-130625071144-phpapp02/75/fabrication-and-characterization-of-onedimensional-solidstate-model-systems-on-silicon-51-2048.jpg?cb=1669825550)
![H Binding Energy
H atom on Si(001)
4.37 eV
+0.16
+0.13
-0.10
-0.15
+
-
More stable
Less stable
EB/H[eV]
sideview
H
H H
H
Buckled Flat
H
H H
H
-0.15
+0.13
-0.10
+0.16
From DFT calculations](https://image.slidesharecdn.com/francoisbiancothesispresentationnosupplinfo-130625071144-phpapp02/75/fabrication-and-characterization-of-onedimensional-solidstate-model-systems-on-silicon-74-2048.jpg?cb=1669825550)
Fabrication and characterization of one-dimensional solid-state model systems on silicon
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Fabrication and characterization of one-dimensional solid-state model systems on silicon
- 1. Fabrication & Characterization of 1D Solid-State Model Systems on Silicon FONDS NATIONAL SUISSE SCHWEIZERISCHE NATIONALFONDS FONDO NAZIONALE SVIZZERO SWISS NATIONAL SCIENCE FOUNDATION FN NFS François Bianco
- 2. Fabrication & Characterization of 1D Nanolines on Silicon FONDS NATIONAL SUISSE SCHWEIZERISCHE NATIONALFONDS FONDO NAZIONALE SVIZZERO SWISS NATIONAL SCIENCE FOUNDATION FN NFS François Bianco
- 3. Motivations
- 4. Time Moore's Conjecture "The number of transistors incorporated in a chip will approximately double every 24 months." Gordon Moore, Intel co-founder 108 104 106 Numberoftransistors
- 5. Time Moore's Conjecture "The number of transistors incorporated in a chip will approximately double every 24 months." Gordon Moore, Intel co-founder 108 104 106 Numberoftransistors Pictures, CC-BY-SA Wikipedia contributors 1980 2010
- 6. Size Limit mm ŵm øhairs nm 1947 2012 © Intel newsroom 3D transistor & Nature Nanotechnology 7, 242 (2012) cells
- 7. Size Limit mm ŵm øhairs nm 1947 2012 © Intel newsroom 3D transistor & Nature Nanotechnology 7, 242 (2012) cells "What would happen if we could arrange the atoms one by one the way we want them?" Richard Feynman
- 8. Chain, CC-BY BotheredByBees (Flickr) Atom Chains or nanolines/nanowires
- 9. Nanowire's Applications Nature Photonics 7, 306 (2013) Adv. Mater. (2013) Adv. Mater. 15, 997 (2003) Angew. Chem. 120, 4597 (2008) APL 85, 6389 (2004) Nature Nanotechnol. 2, 626 (2007) Nature Nanotechnol. 7, 242 (2012) Memory Single-atom transistor Solar cell Gas detector Catalyst Vertical nanowires, © EPFL Press Nature Biotechnol. 23, 1294 (2005) Proteins detector
- 10. Open Questions Fabrication? Properties? Lego bricks, CC-BY-SA dbesham (Flickr)
- 11. Presentation Outline Physics in One Dimension ? Measurement & Synthesis of Nanolines Nanolines on Silicon: Bi nanolines Haiku stripes Haiku Dangling Bond Rows
- 12. Physics in One Dimension One-dimensional CC-BY-NC-ND (with permission) Andredoreto (Flickr)
- 13. One Dimension Trac Jam,, CC-BY-SA Andreas (Flickr)
- 14. 1D Physics CC-BY-NC-ND (with permissions) Water drop, Beauty Eye & Pipes, e.asphyx (Flickr) Fermi Liquid Tomonaga-Luttinger Liquid 2D 1D Quasiparticles Collective excitations
- 15. 1D Physics CC-BY-NC-ND (with permissions) Water drop, Beauty Eye & Pipes, e.asphyx (Flickr) Fermi Liquid Tomonaga-Luttinger Liquid 2D 1D Quasiparticles Collective excitations Spin-charge separation Power laws Peierls distortion Predictions:
- 16. a 2a Peierls Distortion Energie EF -π/2a π/2a Energie EF -π/2a π/2a Wavevector Wavevector Insulator Metallic
- 17. Peierls Distortion Example 293 K (20°C) 4.7 K (-268°C) Insulator Platinium on Ge(001) Surf. Sci. 602, 1731 (2008) Metallic
- 19. Scanning Pr e Braille, CC-BY-SA kainita (Flickr) I Feedback Scanning tunneling microscope (STM)
- 20. 2 nm Monohydride Silicon (001) Scanning Probe I Feedback Scanning tunneling microscope (STM)
- 21. STM Laboratory Low Temperature 77 K (196°C) Ultra-High Vacuum (UHV, ~ 5×10-11 mbar)
- 22. Nanolines S nt es s ❚❤e ❯n✐✈ersa❧ ▲a❜e❧✱ ❈❈✲❇❨✲N❈ ❘an❞a❧❧ ▼unroe ✭❳❑❈❉ n➦✶✶✷✸✮
- 25. ❱icinal Surfaces Stairs, courtesy Sylvain Masson (Flickr)
- 26. Vici♥al Surfaces ❙tairs, courtes② ❙②l ai✁ Masso✁ (❋lic❦r) Co o✂ ✄ici✂al Cu(111) €☎✆ ✽7, 16✹06(☎) (✝01✞)
- 27. 2 nm dim er row [110] [110] Buckled c(4×2) Flip-flop (2×1) Silicon (001) Buckled c(4×2) Flip-flop (2×1) SideviewTopviewSideviewTopview
- 29. Synthesis Principle Seeds, CC-BY-NC-SA CIMMYT (Flickr)
- 30. Synthesis Principle Seeds, CC-BY-NC-SA CIMMYT (Flickr) Bismuth Bismuth, Free Art Alchemist-hp (Wikipedia)
- 31. Synthesis Principle Seeds, CC-BY-NC-SA CIMMYT (Flickr) Bismuth Bismuth, Free Art Alchemist-hp (Wikipedia) Rows of Red, CC-BY-NC-ND (with permission) sea turtle (Flickr) 580°C
- 32. Bismut Nano nes
- 33. Con tant Width ✺n♠ 2 n♠ 4 ✟i di✠❡r✡ wid❡☛o✉☞✌❡ ❝hain o❢ ✍i di✠❡r✡
- 34. Tunable Density 20 nm Low High
- 35. Micro✎eters Long 1 μm 50 nm ❩oo✏
- 36. sideviewtopview Haiku Structure BiBi 5 7 5 7 5 J.H.G Owen et al. J. Mater. Sci. 41, 4568 (2006) Si
- 37. Bi-Nanolines Advantages Self-assembled Micrometers long Tunable density Potential template Well know structure On a semiconductor Flat surface Fixed width
- 38. Haiku Stripes Appl. Phys. Lett. 97, 093102 (2010) & Phys. Rev. B 84, 35328 (2011)
- 40. sideview 2 nm ✑onoh✒✓ri✓e Silicon H H H H
- 41. 10 nm 1 nm Haiku Stripes
- 43. Haiku Stripe Model ✤ i ✥ e ✦ iew 5 7 5 7 5 H H H H H H Si
- 44. Haiku Stripe Model sideview 5 7 5 7 5 H H H H H H Si Field, CC-BY-SA skrewtape (Flickr)
- 45. Haiku Stripe Model sideview 5 7 5 7 5 H H H H H H Si Field, CC-BY-SA skrewtape (Flickr) Bulbs, CC-BY-SA, brewbooks (Flickr)
- 46. How can we be sure that it is a silicon only structure?
- 47. X-Ray Photospectroscopy Eγ X-ray e- Ekin Spectrometer Ekin Eγ Core levels Valence band Φ e- Binding energy (XPS)
- 48. X-Ray Photospectroscopy Binding energy [eV] [Electroncounts/s] O C B O Si Si Si Si Si Clean Si monocrystal
- 49. X-Ray Photospectroscopy Binding energy [eV] [Electroncounts/s] O C B O Si Si Si Si Si Clean Si monocrystal Bi Bi Bi Bi Bi-exposed sample before H exposure Bi
- 50. X-Ray Photospectroscopy Binding energy [eV] [Electroncounts/s] O C B O Si Si Si Si Si Clean Si monocrystal Bi Bi Bi Bi Bi-exposed sample before H exposure Bi Bi-exposed sample after H exposure
- 51. X-Ray Photospectroscopy Binding energy [eV] [Electroncounts/s] O C B O Si Si Si Si Si Clean Si monocrystal Bi Bi Bi Bi Bi-exposed sample before H exposure Bi Bi-exposed sample after H exposure
- 53. STM Simulations In collaboration with Prof. D. Bowler UCL & LCN Relaxed structure STM simulation Charges densities
- 54. 1 nm Filled States simulation experiment High current (200 pA) simulation experiment Low current (80 pA)
- 55. simulation experiment Cross Section 1.54 nm 70pm 5 pm Height Width simulation oset -10 pm experiment 1 nm
- 56. Empty States +2.5 V Simulations + 2.5 eV Data
- 57. Empty States +2.5 V Simulations + 2.5 eV Data 3 nm +2.0 V 1 nm + 1.0 eV
- 59. What else?
- 60. Air Resistant Exposed to air for 25 min 3 nm
- 61. Micrometer Long 200 nm 50 nm
- 62. Self-assembled Stable to 400°C (in UHV) Micrometer long Properties Summary Tunable density Inert in air
- 63. Self-assembled Stable to 400°C (in UHV) Micrometer long Properties Summary Tunable density Inert in air Delocalized electronic state Perfectly matching model
- 64. Self-assembled Stable to 400°C (in UHV) Micrometer long Properties Summary Tunable density Inert in air Delocalized electronic state Perfectly matching model Contacting Probing 1D physics &
- 65. What about Physics? Contacting Electrode Clamp Silicon 1 mm Mask deposition
- 66. 20 nm Markers & Contacts APL 100, 103103 (2012) Au markers Gold depositionExample
- 67. Optical measurement Doping Spectroscopy I(+1.5 V) What about Physics? 2 nm Outlook:
- 68. 1D Dan l n Bon s Rows ❆✧★ ◆ano (2013)
- 70. Assemb✬y Interests Molecular molds Atom assembly Annu. Rev. Phys. Chem. 60, 193 (2009) PRL 91, 136104 (2003) Gallium Phosphine Both examples were sequentially made
- 71. Haiku DB ✯ows H H π* π sideview Hydrogenated Si dimer Dangling Bond (DB)
- 73. Central Dimer Model✳3DviewSideview H H H H Buckled Flat H H H H
- 74. H Binding Energy H atom on Si(001) 4.37 eV +0.16 +0.13 -0.10 -0.15 + - More stable Less stable EB/H[eV] sideview H H H H Buckled Flat H H H H -0.15 +0.13 -0.10 +0.16 From DFT calculations
- 75. Missing Hydrogen6% Si terraces % of dehydrogenated Si atoms
- 76. Missing Hydrogen6% Si terraces % of dehydrogenated Si atoms85% Haiku stripe
- 77. Alternating Flat Dimers + 1.8 V - 1.8 V
- 78. Alternating Flat Dimers + 1.8 V - 1.8 V Spin-polarized structure? Test at room temperature Outlook:
- 79. Properties Summary Micrometer long Highly reactive template Self-assembled Known structure
- 80. Properties Summary Micrometer long Highly reactive template Self-assembled Known structure Assembling 1D molecular or atomic chains
- 81. Con l s on
- 82. ✴✻mmary Self-assembly Lego bricks, CC-BY-SA dbesham (Flickr) Haiku stripes Haiku DB rows Bismuth nanolines
- 83. Summary Haiku stripes Haiku DB rows
- 84. FONDS NATIONAL SUISSE SCHWEIZERISCHE NATIONALFONDS FONDO NAZIONALE SVIZZERO SWISS NATIONAL SCIENCE FOUNDATION FN NFS ✼✾anks & ❏❛✿❀s ❁●❁❖we❂❃❄❣❅❊❂❍❁■öster ◗❲oup photo, ➞❬❭❪❫❴❵❥♦s
- 85. "Atomic hashi. A pair of Bismuth dimers, On Silicon core. Remove all Bismuth, Silicon in silicon. Atomic template." James H.G. Owen 5 7 5 7 5 H H H H H H Si