1. 2SK3799
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3799
Preliminary
Switching Regulator Applications
•
•
•
•
Unit: mm
Low drain-source ON resistance: R DS (ON) = 1.0Ω (typ.)
High forward transfer admittance: |Yfs| = 7.0S (typ.)
Low leakage current: IDSS = 100 μA (V DS = 720 V)
Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V DSS
900
V
Drain-gate voltage (RGS = 20 kΩ)
V DGR
900
V
Gate-source voltage
V GSS
±30
V
ID
(8)
IDP
(24)
Drain power dissipation (Tc = 25°C)
PD
(47)
W
Single pulse avalanche energy
(Note 2)
EA S
TBD
mJ
Avalanche current
IAR
(8)
A
Repetitive avalanche energy (Note 3)
EAR
TBD
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
DC
Drain current
(Note 1)
Pulse (t = 1 ms)
(Note 1)
A
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
(2.66)
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: TBD
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2004-2-26

2. 2SK3799
Preliminary
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
IGSS
V GS = ±25 V, V DS = 0 V


±10
µA
V (BR) GSS
IG = ±10 µA, V DS = 0 V
±30


V
IDSS
V DS = 720 V, V GS = 0 V


100
µA
V (BR) DSS
ID = 10 mA, V GS = 0 V
900


V
V th
V DS = 10 V, ID = 1 mA
2.0

4.0
V
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
RDS (ON)
V GS = 10 V, ID = 4 A

(1.0)
(1.4)
Ω
Forward transfer admittance
Yf s 
V DS = 10 V, ID = 4 A

7.0

S
Input capacitance
Ciss

2200

Reverse transfer capacitance
Crss

45

Output capacitance
Coss

190

V OUT

25

RL =
100Ω

65

Rise time
V DS = 25 V, V GS = 0 V, f = 1 MHz
tr
Turn-on time
ID = 4 A
10 V
V GS
0V
ton
4.7 Ω
Switching time
Fall time
Turn-off time
V DD ∼ 400 V
−
Duty < 1%, tw = 10 µs
=
Qg
Gate-source charge
Qgs
Gate-drain charge
V DD ∼ 400 V, V GS = 10 V, ID = 8 A
−
Qgd

20


120

60


34


toff
Total gate charge
ns

tf
pF
26

nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Test Condition
Min
Typ.
Max
Unit
IDR



(8)
A
IDRP



(24)
A
V DSF
IDR = 8 A, V GS = 0 V


−1.7
V
Reverse recovery time
trr
IDR = 8 A, V GS = 0 V,

1.4

µs
Reverse recovery charge
Qrr
dIDR /dt = 100 A/µs

16

µC
Forward voltage (diode)
Marking
K3799
※
TYPE
※ Lot Number
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
2
2004-2-26

3. 2SK3799
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
3
2004-2-26

4. This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.