The document summarizes the key steps in the n-well CMOS fabrication process: 1) An n-well region is created in a p-type substrate through impurity implantation to form the pMOS transistor. 2) A thick oxide is grown around the nMOS and pMOS active regions, and a thin gate oxide is grown on the active regions. 3) Polysilicon is deposited and patterned to form gates, and n-type and p-type regions are implanted to form sources, drains and channels. 4) Interconnect layers are added through metallization to complete the fabrication process.