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Reliability evaluation of conventional and interleaved dc–dc boost converters
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RELIABILITY EVALUATION OF CONVENTIONAL AND INTERLEAVED DC–DC
BOOST CONVERTERS
By
A
PROJECT REPORT
Submitted to the Department of electronics & communication Engineering in the
FACULTY OF ENGINEERING & TECHNOLOGY
In partial fulfillment of the requirements for the award of the degree
Of
MASTER OF TECHNOLOGY
IN
ELECTRONICS & COMMUNICATION ENGINEERING
APRIL 2016
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CERTIFICATE
Certified that this project report titled “RELIABILITY EVALUATION OF
CONVENTIONAL AND INTERLEAVED DC–DC BOOST CONVERTERS” is the
bonafide work of Mr. _____________Who carried out the research under my supervision
Certified further, that to the best of my knowledge the work reported herein does not form part of
any other project report or dissertation on the basis of which a degree or award was conferred on
an earlier occasion on this or any other candidate.
Signature of the Guide Signature of the H.O.D
Name Name
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DECLARATION
I hereby declare that the project work entitled “RELIABILITY EVALUATION OF
CONVENTIONAL AND INTERLEAVED DC–DC BOOST CONVERTERS” Submitted to
BHARATHIDASAN UNIVERSITY in partial fulfillment of the requirement for the award of the
Degree of MASTER OF APPLIED ELECTRONICS is a record of original work done by me the
guidance of Prof.A.Vinayagam M.Sc., M.Phil., M.E., to the best of my knowledge, the work
reported here is not a part of any other thesis or work on the basis of which a degree or award
was conferred on an earlier occasion to me or any other candidate.
(Student Name)
(Reg.No)
Place:
Date:
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ACKNOWLEDGEMENT
I am extremely glad to present my project “RELIABILITY EVALUATION OF
CONVENTIONAL AND INTERLEAVED DC–DC BOOST CONVERTERS” which is a
part of my curriculum of third semester Master of Science in Computer science. I take this
opportunity to express my sincere gratitude to those who helped me in bringing out this project
work.
I would like to express my Director, Dr. K. ANANDAN, M.A.(Eco.), M.Ed., M.Phil.,(Edn.),
PGDCA., CGT., M.A.(Psy.) of who had given me an opportunity to undertake this project.
I am highly indebted to Co-Ordinator Prof. Muniappan Department of Physics and thank from
my deep heart for her valuable comments I received through my project.
I wish to express my deep sense of gratitude to my guide
Prof. A.Vinayagam M.Sc., M.Phil., M.E., for her immense help and encouragement for
successful completion of this project.
I also express my sincere thanks to the all the staff members of Computer science for their kind
advice.
And last, but not the least, I express my deep gratitude to my parents and friends for their
encouragement and support throughout the project.
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ABSTRACT:
Obviously for the correct operation of conventional boost converters, all components
should work correctly. Interleaved boost converters having several stages, can be used to
increase the reliability. So in this paper, a reliability comparison is done between the
conventional boost converter and the interleaved structure. Two different operation modes are
defined for the interleaved boost converter: half-power and full-power operation modes. The
reliability calculation is based on the Markov model of the converters. The power loss effect of
converter components on their failure rates, and therefore, on the reliability of converter has been
assessed. For the first time different failure rates have been considered for different operation
modes. Also a laboratory prototype of a two-stage interleaved boost dc–dc converter has been
built up and the failure rate of components in different operation modes are calculated
practically. Results show that in addition to other benefits, interleaved structure has higher
reliability and as the power increases, there will be a decrease in the reliability.
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INTRODUCTION:
In order to increase the power processing capability and to improve the reliability of the
power electronic system, interleaved converters are one of the recent research issues in power
electronics engineering. Many articles have studied different aspects of interleaved boost
converters.
For instance, development of a high-efficiency dual-input interleaved dc–dc converter for
reversible power sources to convert low-voltage reversible power sources to a high-voltage dc
bus individually or simultaneously by the phase-shift control.
A novel multidevice interleaved boost converter that interfaces the fuel cell with the
power train of hybrid electric vehicles is proposed. A fault-diagnostic method is introduced for
three-phase interleaved dc–dc converters using only the dc-link current derivative sign features.
To achieve high step-up gain, an interleaved winding-coupled boost converter is proposed.
A two-phase interleaved boost converter is used as critical conduction mode power
factor corrector, which uses a variation-tolerant phase shifter to ensure accurate 180° phase shift
between the two interleaved converters. Application of interleaved dc–dc boost converters for
the photovoltaic generation system and a maximum power point tracking controller is proposed
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EXISTING SYSTEM:
Conventional step-up converters, such as the boost converter and flyback converter,
cannot achieve a high step-up conversion with high efficiency because of the resistances of
elements or leakage inductance; also, the voltage stresses are large. A boost converter (step-up
converter) is a DC-to-DC power converter with an output voltage greater than its input voltage. It
is a class of switched-mode power supply (SMPS) containing at least two semiconductors (a
diode and a transistor) and at least one energy storage element, a capacitor, inductor, or the two
in combination. Filters made of capacitors (sometimes in combination with inductors) are
normally added to the output of the converter to reduce output voltage ripple.
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PROPOSED SYSTEM:
This paper calculates the reliability of interleaved boost dc– dc converter and presents a
comparison with the reliability of the conventional boost converter. Two different operation
scenarios (half-power and full-power operation) are considered for the interleaved converter. The
failure rate of converter components are calculated for different operation scenarios. Also the
power loss effect on the failure rate of components and on the reliability of converters is
discussed
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ADVANTAGES:
An increase in power.
Reliability of components
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BLOCK DIAGRAM:
INPUT DC
SUPPLY
LOADINTERLEAVEDBOOST CONVERTER
12V
DC
OPTO COUPLER CIRCUIT
5V DC
PIC CONTROLLER WITH
BUFFER
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CONCLUSION:
The reliability of the conventional and interleaved dc–dc boost converters have been
presented. For the interleaved structure, half-power and full-power operating scenarios have been
considered. The effect of power loss has been assessed on the temperature, which is a stress
factor in the reliability analysis. Then, the failure rate of converter components has been
calculated based on their power loss in different scenarios. The results show that with an increase
in power, the reliability of components, and thereby, the reliability of the whole converter
decreases.Also the interleaved boost converter operating in both scenarios is more reliable in
comparison to the conventional boost converter.
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REFERENCES:
[1] Y. Song and B.Wang, “Survey on reliability of power electronic systems, IEEE Trans. Power
Electron., vol. 28, no. 1, pp. 591–604, Jan. 2013.
[2] S. Yang, A. Bryant, P. Mawby, D. Xiang, L. Ran, and P. Tavner, “An industry-based survey
of reliability in power electronic converters,” IEEE Trans. Ind. Appl., vol. 47, no. 3, pp. 1441–
1451, May/Jun. 2011.
[3] C. Busca, R. Teodorescu, F. Blaabjerg, S. Munk-Nielsen, L. Helle, T. Abeyasekera, and P.
Rodriguez, “An overview of the reliability prediction related aspects of high power IGBTs in
wind power applications,” Elsevier Microelectron. Rel., vol. 51, pp. 1903–1907, 2011.
[4] E. E. Kostandyan and K. Ma, “Reliability estimation with uncertainties consideration for high
power IGBTs in 2.3 MW wind turbine converter system,” Elsevier Microelectron. Rel., vol. 52,
pp. 2403–2408, 2012.
[5] C. Petit, A. Meinertzhagen, D. Zander, O. Simonetti, M. Fadlallah, and . Maurel, “Low
voltage SILC and P- and N-MOSFET gate oxide reliability,” Elsevier Microelectron. Rel., vol.
45, pp. 479–485, 2005