CM600DY-12NFのデータシート

1. MITSUBISHI IGBT MODULES
CM600DY-12NF
HIGH POWER SWITCHING USE
CM600DY-12NF
¡IC ................................................................... 600A
¡VCES ............................................................ 600V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
Tc measured point (Base plate)
110
93±0.25
14 14 14 4
E2 G2
6
62±0.25
(20.5)
80
30
15
G1 E1
6
C2E1 E2 C1
3-M6 NUTS 25 25 21.5 4-φ6.5 MOUNTING HOLES
E2 G2
18 7 18 7 18 TAB #110. t=0.5
8.5
C2E1 E2 C1
+1.0
–0.5
21.2
LABEL
G1 E1
29
CIRCUIT DIAGRAM
Mar.2003

2. MITSUBISHI IGBT MODULES
CM600DY-12NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage G-E Short 600 V
VGES Gate-emitter voltage C-E Short ±20 V
IC DC, TC’ = 89°C*3 600 A
Collector current
ICM Pulse (Note 2) 1200 A
IE (Note 1) 600 A
Emitter current
IEM (Note 1) Pulse (Note 2) 1200 A
PC (Note 3) Maximum collector dissipation TC = 25°C 1130 W
Tj Junction temperature –40 ~ +150 °C
Tstg Storage temperature –40 ~ +125 °C
Viso Isolation voltage Main Terminal to base plate, AC 1 min. 2500 V
— Main Terminal M6 3.5 ~ 4.5 N•m
Torque strength
— Mounting holes M6 3.5 ~ 4.5 N•m
— Weight Typical value 580 g
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
ICES Collector cutoff current VCE = VCES, VGE = 0V — — 1 mA
VGE(th) Gate-emitter threshold voltage IC = 60mA, VCE = 10V 5 6 7.5 V
IGES Gate leakage current VGE = VGES, VCE = 0V — — 0.5 µA
Tj = 25°C — 1.7 2.2
VCE(sat) Collector-emitter saturation voltage IC = 600A, VGE = 15V V
Tj = 125°C — 1.7 —
Cies Input capacitance — — 90 nF
VCE = 10V
Coes Output capacitance — — 11 nF
VGE = 0V
Cres Reverse transfer capacitance — — 3.6 nF
QG Total gate charge VCC = 300V, IC = 600A, VGE = 15V — 2400 — nC
td(on) Turn-on delay time — — 500 ns
tr Turn-on rise time VCC = 300V, IC = 600A — — 300 ns
td(off) Turn-off delay time VGE1 = VGE2 = 15V — — 750 ns
tf Turn-off fall time RG = 4.2Ω, Inductive load switching operation — — 300 ns
trr (Note 1) Reverse recovery time IE = 600A — — 250 ns
Qrr (Note 1) Reverse recovery charge — 8.7 — µC
VEC(Note 1) Emitter-collector voltage IE = 600A, VGE = 0V — — 2.6 V
Rth(j-c)Q IGBT part (1/2 module) — — 0.11 °C/W
Thermal resistance*1
Rth(j-c)R FWDi part (1/2 module) — — 0.18 °C/W
Rth(c-f) Contact thermal resistance Case to fin, Thermal compound Applied*2 (1/2 module) — 0.02 — °C/W
Rth(j-c’)Q Thermal resistance Tc measured point is just under the chips — — 0.046*3 °C/W
RG External gate resistance 1.0 — 10 Ω
*1 : Tc measured point is shown in page OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : Tc’ measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
Mar.2003

3. MITSUBISHI IGBT MODULES
CM600DY-12NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
1200 4
SATURATION VOLTAGE VCE (sat) (V)
VGE = 15 Tj = 25°C VGE = 15V
20V
COLLECTOR CURRENT IC (A)
1000 13
COLLECTOR-EMITTER
12
3
800
600 2
11
400
1
10
200 Tj = 25°C
8 9 Tj = 125°C
0 0
0 2 4 6 8 10 0 200 400 600 800 1000 1200
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE
VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
10 104
SATURATION VOLTAGE VCE (sat) (V)
Tj = 25°C 7
5
EMITTER CURRENT IE (A)
3
8
COLLECTOR-EMITTER
2
103
6 7
5
3
2
4
IC = 600A
102
IC = 1200A 7
5
2
3
Tj = 25°C
IC = 240A 2
Tj = 125°C
0 101
6 8 10 12 14 16 18 20 0 1 2 3 4 5
GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE HALF-BRIDGE
CHARACTERISTICS SWITCHING CHARACTERISTICS
(TYPICAL) (TYPICAL)
103 103
7 7 td(off)
CAPACITANCE Cies, Coes, Cres (nF)
5 5 td(on)
3 3
tf
SWITCHING TIME (ns)
2 2
102 102
7 Cies 7
5 5 tr
3 3
2 2
Conditions:
101 101 VCC = 300V
7 Coes 7
5 5 VGE = ±15V
3 3 RG = 4.2Ω
2 Cres 2 Tj = 125°C
VGE = 0V Inductive load
100 –1 100 1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 10 2 3 5 7 102 2 3 5 7 103
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
Mar.2003

4. MITSUBISHI IGBT MODULES
CM600DY-12NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
REVERSE RECOVERY CHARACTERISTICS IMPEDANCE CHARACTERISTICS
OF FREE-WHEEL DIODE (IGBT part & FWDi part)
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
REVERSE RECOVERY CURRENT lrr (A)
103 100
REVERSE RECOVERY TIME trr (ns)
7 7
THERMAL IMPEDANCE Zth (j–c)
5 Single Pulse
NORMALIZED TRANSIENT
5
3 TC = 25°C
2
3
2 10–1 10–1
Irr 7 7
5 5
102 trr 3 3
7 2 2
Conditions: IGBT part:
5 10–2 Per unit base = 10–2
VCC = 300V
7 7
3 VGE = ±15V 5 Rth(j–c) = 0.11°C/W 5
RG = 4.2Ω FWDi part:
2 3 3
Tj = 25°C 2
Per unit base = 2
Inductive load Rth(j–c) = 0.18°C/W
101 1 10–3 10–3
10 2 3 5 7 102 2 3 5 7 103 10–5 2 3 5 710–4 2 3 5 7 10–3
EMITTER CURRENT IE (A) TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 600A
GATE-EMITTER VOLTAGE VGE (V)
VCC = 200V
16
VCC = 300V
12
8
4
0
0 1000 2000 3000
500 1500 2500 3500
GATE CHARGE QG (nC)
Mar.2003