半導體製程

半導體原理及應用 (II)

Outline ,[object Object],[object Object],[object Object],[object Object]

[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],ULSI 簡介與應用

Semiconductor ,[object Object],[object Object],[object Object],[object Object],[object Object]

Market Share in Semiconductor Devices ,[object Object]

MOSFET M: Metal (or n + -poly, p + -poly) O: Oxide (gate oxide) S: Semiconductor (p-Si or n-Si) FET: Field effect transistor (E y , E x )

IC ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

ULSI 製程簡介 ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

IC Fabrication Flow ,[object Object]

多晶矽原料 SiO 2 + 2C  Si + 2CO ( 純度 98%) Si + 3HCl  SiHCl 3 + H 2 ( 蒸餾去除不純物 ) SiHCl 3 + H 2  Si + 3HCl ( 純度 99.999999999%) “11 個 9”

長晶爐 ( 固定液面高度 ) ( 上升 : 0.3~10mm/min 旋轉 : 2~20rpm) ( 控制 : 晶棒直徑上升速率液面溫度 ) ( 避免 Si 在高溫氧化 ) SiO 2  SiO + O ( 脫氧 ) ( 熱場 ) ( 液態表面溫度 )

ULSI 之未來趨勢 ,[object Object],[object Object],[object Object],[object Object],[object Object]

Challenges in IC ,[object Object]

Technology Roadmap ,[object Object]

Recent Trend of MOSFET ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object]

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