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Thermoelectricity

    Prasenjit Roy
Thermoelectricity
• Seebeck effect

                   In 1821, Thomas Seebeck found that
                   an electric current would flow
                   continuously in a closed circuit made
                   up of two dissimilar metals, if the
                   junctions of the metals
                   were maintained at two different
                   temperatures.
Thermoelectricity
• Peltier effect

                       When some current is flowing
                       The carrier comes as the flow
                       From one to other side, transferring
                       the energy . So temperature
                       difference arises.
Seebeck coefficient

                                   Seebeck
                                   coefficient


Thermodynamic figure
Of merit
Competition between electrical conductivity
       and the Seebeck coefficient




                                                         Picture taken from :
                                                         Rep. Prog. Phys.
                                                         51 (1988) 459-539.
                                                         Ref 3.




        The power factor depends on these two factors.
Increase zT
                    
1. High electrical conductivity
     Low Joule heating
2. Large Seebeck coefficient
      Large potential difference
3. Low thermal conductivity.
      large temperature difference
PRESENTLY ACHIEVABLE VALUE OF ZT




Let ZT = 1, e.g. Optimized Bi2Te3 (300 K)
   Resistivity ~ 1.25 mΩ-cm
   Thermopower ~ 220 μV/K
   Thermal Conductivity ~ 1.25 Wm-1K-1
Needed value of zT

                          ~
                          3
So if we have a hypothetical thermal conductivity =0,
we need >220 μV/K of Thermopower.
Recently used materials
                     In the recently
                     used materials,
AgPbmSbTe2m          we mostly
                     focus on
                     Skutterudites(fil
                     led).
                     We will not
                     incorporate Pb
                     or any such
                     toxic materials
                     in the alloys.
Way to increase zT
• 1. Exploring new materials with complex
  crystalline structure.
• 2. Reducing the dimensions of the material.



Reason: IN those materials , the rattling motion of loosely bounded atoms
within a large case generates strong scattering against lattice phonon propagation.
But has less of an impact on transport of electrons.
Need of computation
• By the use of computational modeling we can predict the
  possible structural properties in bulk as well as special
  structures like nanotube nano layer etc.
• We used modeling of samples by Wien 2K. Where we
  specified the crystal structure and found out characteristics
  like density of states, bandstructure, electronic density by
  which we can at least predict what kind of material is
  suitable for getting better thermo-electric properties,
  namely electrical conductivity, and extending the studies
  further with the help of Boltzmann transport properties we
  can find out thermoelectric power factor which is directly
  proportional to the figure of merit. Although the studies
  with phonon is not clear, the group is working on it.
Wien 2K

• Wien2K uses LAPW method to solve the many body
  problem and finding the energy of the system. The program
  utilizes many utility programs to find different
  characteristics properties of the system. Like Eos fit ,
  supercell, optimization job, structure editor, x-crysden and
  lot more. The code is written mostly in Fortran 90 and
  some in c+ . All the programs are interlinked via c-shell
  scripts.
Flow of programs
1. Specify your system. i.e. write the structure file(case.struct) in the system. For that you
   must know the crystal structure, that is position of the atom in the unit cell and the
   space group, the constituting atoms and the atomic numbers of them. These are the
   basic inputs that will be needed in the whole calculation .
2. Then initialize your calculation. i.e. finding the RMT values , number of symmetry
   operation and also it compares the calculated number with the available value also
   specified in case.struct, and the k point symmetry, the potential using to calculating the
   properties etc.
3. Then run a usual self consistent force cycle. Which will help in calculating all other
   properties of the crystal . This can also be done with three different preferences,
   force(automatic geometry optimization), spin-orbit coupling, spin-polarization(for the
   magnetic cases).
4. Then we use to find the usual available properties that we can obtain from the history
   file, case.scf.
5. We can calculate DOS, bandstructure with band character plotting, x-ray spectra,
   electron density, volume optimization etc.
6. Analyze the obtained results.
Diversity in calculation
Calculation
Thermoelectric material
Why only focusing near the Fermi
            surface?
Possible thermoelectric materials, Mg2Si
This is a typical
example of electron
density plot obtained
by Wien2K using
GNUPLOT and
xCrysden respectively.
The green spheres are
Mg and the blue ones
are Si. The coloured
planes as specified by
the picture shows
gradual variation of
electron density with
the real space
variation.

The main difference
with density of states
and electron density is
that DOS is plotted in
momentum space and
electron density in real
space.
Approximations:
• In the technique Wien2K provides the freedom to choose different
  potentials in order to calculate the properties of the materials. We
  can either choose GGA, LDA, LDA-PBE, mBJ potentials in cases.
• I can show the difference arising due to these potential variation.
• These two pictures shows the changes arising in the Mg2Si
  structures because of the LDA and the mBJ approximation, although
  the material and its structures are same.
• Structural details of Mg2si needed for calculations: Space
  group=225 Fm-3m. a=b=c=6.35 Angstrom. α=β=γ=90°.
• In our case mBJ turns out to be more realistic since the band gap is
  closer to the experimentally obtained value, as shown in the
  following pictures.




 Mg2Si LDA DOS                             Mg2Si mBJ DOS
Volume optimization
Volume optimization




Volume optimization in Mg2si   Volume optimization in Mg2Sn
Volume optimization



Mg2Si                           Mg2sn
Using Birch-Murnaghan switch:   Using Birch-Murnaghan switch:
1. V0=433.3047373 Bohr^3        1. V0=530.5161274 Bohr^3
2. E0=-690.7210080              2. E0= - 483.6014708
3. B0=53.31241497 Gpa           3. B0= 0.000101233 Gpa
4. B0’’= 0.176933 X 10^-3       4. B0’’= 0.7491 X 10^-4
5. A0=12.0121 Bohr.             5. A0=12.850485 Bohr.
Effect of stress: strain.
• We can apply stress, i.e. changing the lattice parameter, and tracing out
  what possible changes occurs in its properties. We can interestingly
  point out in this experiment that whether the bandstructure is only the
  function of the lattice parameter or not. We will plot the bandstructure
  of both Mg2Si and Mg2Sn at a range varying from both of the
  material’s equilibrium volumes. If the properties as well as the bands
  varies the same way in both cases then our approximation is correct.
Effect of stress: strain.
• The similarity is clear in case of both material at a particular value of
  lattice parameter, a= 12.85 Bohr. So it can be safely concluded that the
  bandstructures are mostly dependent on the lattice parameter of the
  material.




         The bandstructure of both Mg2si and Mg2Sn at a= 12.85 Bohr
Effect of stress: strain.
• The band-gap also plays an important role in the
  calculation. To prove our assumption I have plotted the
  band gap variation with lattice parameter in both the
  material. The calculations were done using mBJ
  approximation.

   The graph shows
   Similar variation of
   Band gap vs lattice
   Parameter in both
   Mg2si and Mg2sn.
Although there is very small difference
In these two pictures the DOS gives the
Information that the slope is more steeper
In the pic 2 proving it to be a better




                                             thermoelectric. The band gap is
                                             almost similar in both cases,
                                             Approximately 0.5 eV. Most
                                             Interestingly the bands are much
                                             More steeper in these two cases
                                             Than both Mg2Si and Mg2Sn.
Thermal conductivity and
               nano-structuring
• The thermal conductivity of the material depends on the thermal
  diffusivity value, density and the mass of the sample.
• The aggregated thermal conductivity is the sum of two terms. The lattice
  thermal conductivity and the electronic thermal conductivity.
• Now the electronic part of K depends on the electrical part of conductivity
  multiplied by the Lorentz number. So increasing the electrical conductivity
  in turn increases this part.
• The lattice thermal conductivity is independent of the electronic vibration
  but depends entirely on the phononic vibration. So we can control this
  term to obtain a minimized value of K in order to obtain a larger zT.
• Theoretically and experimentally there are few ways to do that.
    1.   as in the simple chain vibration of the mass-point, we can insert an atom
         greater than twice the mass of the atoms containing chain. Similarly we can
         here insert a dissimilar masspoint to damp the phnonic vibration.
    2.   We can ground the sample up to nanometer level. So the vibration will not
         propagate beyond the grain size. Hence reducing the thermal conductivity.
• So in this way we can further improve the zT value.
Reference and conclusion
• Reference:
   1.      The Wien2K software and its ‘Userguide’.
   2.      Density Functional Theory and the Family of (L)APW-methods: a step-by-
           step introduction by S. Cottenier.
   3.      Materials for thermoelectric energy conversion , C. Wood, Rep. Prog. Phys.
           51 (1988) 459-539.



        • Conclusion:
           The work described here is very fundamental in material characterization.
           Electronic properties calculation has done with great details and complication.
           Seebeck coefficient and electrical conductivity can easily be found out with
           these data. Thermal conductivity can be found out as well with some more
           Calculation.
           Doping using CPA method could be useful to make both p-type and n-type
           Semiconductor with optimized carrier concentration.

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Roy-document-3

  • 1. Thermoelectricity Prasenjit Roy
  • 2. Thermoelectricity • Seebeck effect In 1821, Thomas Seebeck found that an electric current would flow continuously in a closed circuit made up of two dissimilar metals, if the junctions of the metals were maintained at two different temperatures.
  • 3. Thermoelectricity • Peltier effect When some current is flowing The carrier comes as the flow From one to other side, transferring the energy . So temperature difference arises.
  • 4. Seebeck coefficient Seebeck coefficient Thermodynamic figure Of merit
  • 5. Competition between electrical conductivity and the Seebeck coefficient Picture taken from : Rep. Prog. Phys. 51 (1988) 459-539. Ref 3. The power factor depends on these two factors.
  • 6. Increase zT  1. High electrical conductivity Low Joule heating 2. Large Seebeck coefficient Large potential difference 3. Low thermal conductivity. large temperature difference
  • 7. PRESENTLY ACHIEVABLE VALUE OF ZT Let ZT = 1, e.g. Optimized Bi2Te3 (300 K)  Resistivity ~ 1.25 mΩ-cm  Thermopower ~ 220 μV/K  Thermal Conductivity ~ 1.25 Wm-1K-1
  • 8. Needed value of zT ~ 3 So if we have a hypothetical thermal conductivity =0, we need >220 μV/K of Thermopower.
  • 9. Recently used materials In the recently used materials, AgPbmSbTe2m we mostly focus on Skutterudites(fil led). We will not incorporate Pb or any such toxic materials in the alloys.
  • 10. Way to increase zT • 1. Exploring new materials with complex crystalline structure. • 2. Reducing the dimensions of the material. Reason: IN those materials , the rattling motion of loosely bounded atoms within a large case generates strong scattering against lattice phonon propagation. But has less of an impact on transport of electrons.
  • 11. Need of computation • By the use of computational modeling we can predict the possible structural properties in bulk as well as special structures like nanotube nano layer etc. • We used modeling of samples by Wien 2K. Where we specified the crystal structure and found out characteristics like density of states, bandstructure, electronic density by which we can at least predict what kind of material is suitable for getting better thermo-electric properties, namely electrical conductivity, and extending the studies further with the help of Boltzmann transport properties we can find out thermoelectric power factor which is directly proportional to the figure of merit. Although the studies with phonon is not clear, the group is working on it.
  • 12. Wien 2K • Wien2K uses LAPW method to solve the many body problem and finding the energy of the system. The program utilizes many utility programs to find different characteristics properties of the system. Like Eos fit , supercell, optimization job, structure editor, x-crysden and lot more. The code is written mostly in Fortran 90 and some in c+ . All the programs are interlinked via c-shell scripts.
  • 13. Flow of programs 1. Specify your system. i.e. write the structure file(case.struct) in the system. For that you must know the crystal structure, that is position of the atom in the unit cell and the space group, the constituting atoms and the atomic numbers of them. These are the basic inputs that will be needed in the whole calculation . 2. Then initialize your calculation. i.e. finding the RMT values , number of symmetry operation and also it compares the calculated number with the available value also specified in case.struct, and the k point symmetry, the potential using to calculating the properties etc. 3. Then run a usual self consistent force cycle. Which will help in calculating all other properties of the crystal . This can also be done with three different preferences, force(automatic geometry optimization), spin-orbit coupling, spin-polarization(for the magnetic cases). 4. Then we use to find the usual available properties that we can obtain from the history file, case.scf. 5. We can calculate DOS, bandstructure with band character plotting, x-ray spectra, electron density, volume optimization etc. 6. Analyze the obtained results.
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  • 23. Why only focusing near the Fermi surface?
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  • 27. This is a typical example of electron density plot obtained by Wien2K using GNUPLOT and xCrysden respectively. The green spheres are Mg and the blue ones are Si. The coloured planes as specified by the picture shows gradual variation of electron density with the real space variation. The main difference with density of states and electron density is that DOS is plotted in momentum space and electron density in real space.
  • 28. Approximations: • In the technique Wien2K provides the freedom to choose different potentials in order to calculate the properties of the materials. We can either choose GGA, LDA, LDA-PBE, mBJ potentials in cases. • I can show the difference arising due to these potential variation.
  • 29. • These two pictures shows the changes arising in the Mg2Si structures because of the LDA and the mBJ approximation, although the material and its structures are same. • Structural details of Mg2si needed for calculations: Space group=225 Fm-3m. a=b=c=6.35 Angstrom. α=β=γ=90°. • In our case mBJ turns out to be more realistic since the band gap is closer to the experimentally obtained value, as shown in the following pictures. Mg2Si LDA DOS Mg2Si mBJ DOS
  • 31. Volume optimization Volume optimization in Mg2si Volume optimization in Mg2Sn
  • 32. Volume optimization Mg2Si Mg2sn Using Birch-Murnaghan switch: Using Birch-Murnaghan switch: 1. V0=433.3047373 Bohr^3 1. V0=530.5161274 Bohr^3 2. E0=-690.7210080 2. E0= - 483.6014708 3. B0=53.31241497 Gpa 3. B0= 0.000101233 Gpa 4. B0’’= 0.176933 X 10^-3 4. B0’’= 0.7491 X 10^-4 5. A0=12.0121 Bohr. 5. A0=12.850485 Bohr.
  • 33. Effect of stress: strain. • We can apply stress, i.e. changing the lattice parameter, and tracing out what possible changes occurs in its properties. We can interestingly point out in this experiment that whether the bandstructure is only the function of the lattice parameter or not. We will plot the bandstructure of both Mg2Si and Mg2Sn at a range varying from both of the material’s equilibrium volumes. If the properties as well as the bands varies the same way in both cases then our approximation is correct.
  • 34. Effect of stress: strain. • The similarity is clear in case of both material at a particular value of lattice parameter, a= 12.85 Bohr. So it can be safely concluded that the bandstructures are mostly dependent on the lattice parameter of the material. The bandstructure of both Mg2si and Mg2Sn at a= 12.85 Bohr
  • 35. Effect of stress: strain. • The band-gap also plays an important role in the calculation. To prove our assumption I have plotted the band gap variation with lattice parameter in both the material. The calculations were done using mBJ approximation. The graph shows Similar variation of Band gap vs lattice Parameter in both Mg2si and Mg2sn.
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  • 38. Although there is very small difference In these two pictures the DOS gives the Information that the slope is more steeper In the pic 2 proving it to be a better thermoelectric. The band gap is almost similar in both cases, Approximately 0.5 eV. Most Interestingly the bands are much More steeper in these two cases Than both Mg2Si and Mg2Sn.
  • 39. Thermal conductivity and nano-structuring • The thermal conductivity of the material depends on the thermal diffusivity value, density and the mass of the sample. • The aggregated thermal conductivity is the sum of two terms. The lattice thermal conductivity and the electronic thermal conductivity. • Now the electronic part of K depends on the electrical part of conductivity multiplied by the Lorentz number. So increasing the electrical conductivity in turn increases this part. • The lattice thermal conductivity is independent of the electronic vibration but depends entirely on the phononic vibration. So we can control this term to obtain a minimized value of K in order to obtain a larger zT. • Theoretically and experimentally there are few ways to do that. 1. as in the simple chain vibration of the mass-point, we can insert an atom greater than twice the mass of the atoms containing chain. Similarly we can here insert a dissimilar masspoint to damp the phnonic vibration. 2. We can ground the sample up to nanometer level. So the vibration will not propagate beyond the grain size. Hence reducing the thermal conductivity. • So in this way we can further improve the zT value.
  • 40. Reference and conclusion • Reference: 1. The Wien2K software and its ‘Userguide’. 2. Density Functional Theory and the Family of (L)APW-methods: a step-by- step introduction by S. Cottenier. 3. Materials for thermoelectric energy conversion , C. Wood, Rep. Prog. Phys. 51 (1988) 459-539. • Conclusion: The work described here is very fundamental in material characterization. Electronic properties calculation has done with great details and complication. Seebeck coefficient and electrical conductivity can easily be found out with these data. Thermal conductivity can be found out as well with some more Calculation. Doping using CPA method could be useful to make both p-type and n-type Semiconductor with optimized carrier concentration.