Fisika Zat Padat (5 - 7) b-metal_vs_semiconductor

Pertemuan 7 FISIKA ZAT PADAT Iwan Sugihartono, M.Si Jurusan Fisika Fakultas Matematika dan Ilmu Pengetahuan Alam

Metal-Semiconductor Junctions - Outline ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Metal-Semiconductor Junctions - barrier basics ,[object Object],[object Object],[object Object],[object Object],The vacuum reference levels are equal. Both materials are neutral. Note definitions of Φ (work function) and χ (electron affinity) 02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id | Note: no surface states for nows ; they come later

Metal-semiconductor Junctions - Barrier Basics ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Metal-semiconductor Junctions - Barrier Basics ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Real Semiconductor Surfaces - Surface States ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Real Semiconductor Surfaces - Surface States, Cont. ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Metal-semiconductor Junctions - W. Surface States ,[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id | Note: 0 < f < 1; for many III-V's f ≈ 0.6-0.7

Metal-semiconductor Junctions - W. Surface States (Cont.) ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Applying Bias To A Metal-semiconductor Junction ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Applying Bias To A Metal-semiconductor Junction, Cont. ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Applying bias to a metal-semiconductor junction, cont ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Applying Bias To A Metal-semiconductor Junction, Cont. ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Applying Bias To A Metal-semiconductor Junction, Cont. ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Comparison Of M-s Junctions And P-n Junctions ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

What Metal-semiconductor Junctions Are Good For ,[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],[object Object],02/02/11 © 2010 Universitas Negeri Jakarta | www.unj.ac.id |

Fisika Zat Padat (5 - 7) b-metal_vs_semiconductor

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Fisika Zat Padat (5 - 7) b-metal_vs_semiconductor