The Role of Taxonomy and Ontology in Semantic Layers - Heather Hedden.pdf
Fab presentaion
1. WAFER PROCESSING EQUIPMENT
AND
CLEAN ROOM INVENTORY
FOR A RESEARCH BASED IC FABRICATION FACILITY
SAMI UR REHMAN (sami-
rehman.blogspot.com)
1
SAMI UR REHMAN
2. Difference between Si wafer processing
and compound (III/V) wafer processing
Oxidation
Silicon has a natural oxide while compound semiconductors
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do not (deposition required). Compound semiconductor
requires epitaxial deposition techniques which are quiet
expensive!
Stability
Most of these compound semiconductors are not stable at
high temperatures unlike Si. For Si, one would therefore make
MOSFET kind of structures. 2
3. Difference between Si wafer processing
and compound (III/V) wafer processing
Lattice Constants
The first and principal difference between a Si
and a GaAs substrate is the respective lattice
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constants. Crystalline materials (thin films) which
will be deposited on top of such substrates will
have to take this into account.
Etching
Compound semiconductors like GaAs also
requires a complex Chlorine based etch process
unlike Si (F based etch). 3
4. WHAT IS A CLEAN ROOM?
• A clean-room or clean room is an environment, typically
used in manufacturing and scientific research, that has a low
level of environmental pollutants such as dust,
airborne microbes, aerosol particles and chemical vapors
(Wikipedia)
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• What matters is Particle size and particle number
• The standard is called: FED-STD-209 E
• This standard was cancelled on Nov 2011
• Standardizing Agency: U.S. General Services
Administration (GSA)
• Replaced by ISO 14644-1 4
5. CLEAN ROOM
CLEAN ROOM STANDARDS
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Particle Counters are used to determine the air quality by counting and sizing the
number of particles in the air.
This information is useful in determining the amount of particles inside a building or 5
in the ambient air
It also is useful in understanding the cleanliness level in a controlled environment.
6. Cost Analysis
• Quotations have been sent
• SANCO
• Rough estimates of the equipment have been obtained from:
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6
7. CLEAN ROOM
PARTICLE COUNTERS
Manufacturer Capovani Brothers Inc
Model PARTICLE MEASURMENT SYSTEMS LPS A-310
Price $ 7,350.00 (each)
Year of 2001
Manufacture
Dimensions Width8.750 in (22.2 cm) Depth18.000 in (45.7 cm) H
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eight7.000 in (17.8 cm)
Weight 30 lb (14 kg)
Accessories/Othe Maximum Number of Channels =4
r Information Channel Sizes= 0.3, 0.5, 1.0, 5.0 µm
Light Source=HeNe Multimode, Passive Cavity
7
$7,350
8. CLEAN ROOM
PARTICLE COUNTERS
Manufacturer Pacific Scientific
Model MET ONE
Price $ 4,250.00
Year of 2001
Manufacture
Dimensions Width13.000 in (33.0 cm) Depth12.000 in (30.5 cm) Heig
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ht7.000 in (17.8 cm)
Weight 30 lb (14 kg)
Accessories/Other Part no.: 331-3-1-AL
Information
Particle size: 0.3 to 10 Micron
8
$4,250
9. CLEAN ROOM
AIR CONDITIONER/AIR FLOW CONTROLLER
Manufacturer Air Control Inc.
Model VLF CART
Price $ 3,250.00
Year of Manufacture 1998
Dimensions Width 74.000 in (188.0 cm)
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Depth 21.000 in (53.3 cm)
Height 74.000 in (188.0 cm)
Weight 5,459 lb (2,476 kg)
Accessories/Other Unit contains a 9W X 10H array of
Information stainless steel cubicles (6.25"W x 4"H
x 11"D)
Blower: (2) EBM's STD 9
Prefilter #: (2) 16 x 20 x 1
$3,250
Hepa Filter #: (1) 18 x 48 x 3
10. CLEAN ROOM
AIR CONDITIONER/AIR FLOW CONTROLLER
Manufacturer Air Control Inc.
Model AirPod
Price
Year of Manufacture
Dimensions Width: AirPod I: 62.50”, AirPod II:
80.50”, AirPod III: 104.50”
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Height: 31.00”
Depth: 31.00”
Weight Weight (lbs): AirPod I: 312, AirPod II:
394, AirPod III: 455
Nominal Air flow: 2500 CFM (3/4 HP), 5000 CFM (3HP),
Accessories/Other 4000 CFM (3HP with AD after-filter).
Information Blower Pkg (HP): AirPod I: 2-speed forward curve,
direct drive; AirPod II & III: Dynamically balanced, non-
sparking, motor/blowers. (Optional 2-speed
motor/blower available for AirPod II.) 10
Electrical: AirPod I, standard: 115/1/60, 11.4 amps, 3/4
HP; AirPod II & III, standard: 208-230/460/3/60, 7.8-
7.2/4 amps, 3 HP; optional: 230/1/60 11.7 amps, 3 HP.
$3,000
11. IC FABRICATION PHILOSOPHY!
Adding impurities in
Adding layer onto wafer!
wafer!
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Deposition Implantation
Removing an added layer! Photolithography
11
Etching
12. III/V Group ingot production
Similar to the silicon ingot growth process, elemental
forms of III and V group elements, plus small quantities
Quartz Tube
of dopant material-silicon, Rotating Chuck
tellurium or zinc-are reacted at
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Seed Crystal
elevated temperatures to Growing Crystal
(boule)
form ingots of doped single-
crystal III/V material like GaAs.
RF or Resistance
Heating Coils
Molten Silicon
(Melt) 12
Crucible
13. Photomask Creation
• The photomask is a copy of the circuit pattern,
drawn on a glass plate coated with a metallic film.
• The glass plate lets light pass, but the metallic film
does not.
• Due to increasingly high integration and
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miniaturization of the pattern, the size of the
photomask is usually magnified four to ten times
the actual size.
13
14. PHOTOLITHOGRAPHY
Wafer processing consists of a sequence of
additive and subtractive steps with patterning!!!!!
oxidation
deposition etching lithography
ion implantation
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Lithography refers to the process of transferring a circuit pattern,
embedded on a mask, to the surface of the wafer
Equipment, materials, and processes needed:
• A mask (for each layer to be patterned) with the desired pattern
• A light-sensitive material (called photoresist) covering the wafer so as to receive
the pattern
• A light source and method of projecting the image of the mask onto the
photoresist (“printer” or “projection stepper” or “projection scanner”)
• A method of “developing” the photoresist, that is selectively removing it from the 14
regions where it was exposed
Photolithography is a process analogous to developing film in a darkroom
15. PHOTOLITHOGRAPHY STEPS
• 1 # PRE BAKE THE WAFER
Wafer is preheated to about 200 - 250 degrees C in a bake
oven. The purpose of this step is to ensure that the wafer is
completely dry. Any moisture on the wafer surface would
interfere with the photolithography process, causing it to yield
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poor results.
15
16. PHOTOLITHOGRAPHY STEPS
• 2 # PHOTORESIST APPLICATION AND SPINNING
• The wafer is placed on the wafer chuck in the center of the
Photoresist Spinner. After properly adjusting the wafer on the
spinner, photo resist material is applied onto the surface of
the wafer and is spun so that photo resist evenly distributes
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on the wafer
• Using the Nitrogen Gun,
now the wafer surface is
Blown to remove any dust
particles.
16
34. PHOTOLITHOGRAPHY STEPS
• 3 # SOFT BAKE
• The wafer is placed into the Soft-Bake Oven for 30 minutes.
• The purpose of the soft bake is to semi-harden
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the photoresist
34
35. Methods of Soft Bake
• Hot plates
• Convection oven
• Infrared oven
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• Microwave oven
35
36. Baking Systems
Wafer MW Source
Photoresist
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Heater Heated N 2
Chuck
Wafers
Vacuum Wafer
Heater Vacuum
Hot plate Convection oven Microwave oven
36
37. Hot Plates
• Widely used in the industry
• Back side heating, no surface Wafer
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“crust”
Heater
• In-line track system
37
38. PHOTOLITHOGRAPHY STEPS
• 4 # EXPOSE TO UV LIGHT
• carefully place the wafer on the wafer chuck of the Aligner
• When the wafer has been properly aligned to the mask,
expose it to UV light
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• the exposure time should be set according to the particular
type of photo resist and wattage of the bulb being used.
38
39. Alignment
Gate Mask
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Photoresist
Polysilicon
n+ n+
P-Well 39
40. Exposure
Gate Mask
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Photoresist
Polysilicon
n+ n+
P-Well 40
41. Ready for Post Exposure Bake
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Photoresist
Polysilicon
n+ n+
P-Well 41
42. PHOTOLITHOGRAPHY STEPS
• 5 # DEVELOPMENT
• The type of developer solution used is determined by the
type of photoresist chosen.
• Then we check the developer for the recommended
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development time. Typically, this will be around 30 seconds
• Then the wafer is immersed in the developer and agitate
mildly until the time has expired.
• Finally the wafer is rinsed with ionized water
42
43. Schematic of a Spin Developer
DI water Developer
Wafer
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Water
sleeve
Chuck
Drain
Vacuum
43
44. Applying Development
Solution
Exposed Development solution
Photoresist dispenser nozzle
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Wafer
Chuck
Spindle
To vacuum pump
44
45. Applying Development
Solution
Exposed
Photoresist
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Wafer
Chuck
Spindle
To vacuum pump
45
46. Developer Spin Off
Edge PR removed Patterned
photoresist
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Wafer
Chuck
Spindle
To vacuum
pump 46
47. DI Water Rinse
DI water
dispenser
nozzle
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Wafer
Chuck
Spindle
To vacuum
pump 47
48. Spin Dry
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Wafer
Chuck
Spindle
To vacuum pump
48
49. Ready For Hard Bake
Spindle
Chuck
Wafer
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50. Development Profiles
PR PR
Substrate Substrate
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Normal Development Incomplete Development
PR PR
Substrate Substrate
Under Development Over Development 50
51. Developer Solution
• +PR normally uses weak base
solution
• The most commonly used one is
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the tetramethyl ammonium
hydride, or TMAH ((CH3)4NOH).
51
52. Developer Solutions
Positive PR Negative PR
Developer TMAH Xylene
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Rinse DI Water n-Butylacetate
52
53. PHOTOLITHOGRAPHY STEPS
• 6 # HARD BAKE THE WAFER
• The wafer is placed into the Hard Bake oven now which
should be preheated to between 120-130 degrees C.
• The wafers should remain in the hard bake oven for 30
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minutes. This prepares the wafer for the next processing step.
53
54. Types of Photoresist
Negative Photoresist Positive Photoresist
• Becomes insoluble • Becomes soluble
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after exposure after exposure
• When developed, • When developed,
the unexposed the exposed parts
parts dissolved. dissolved
• Cheaper • Better resolution
54
55. Negative and Positive Photoresists
Photoresist
Substrate
UV light
Mask/reticle
Photoresist
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Exposure
Substrate
Negative
Photoresist
Substrate After
Positive Development
Photoresist
Substrate 55
56. Comparison of Photoresists
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- PR + PR
Film Film
Substrate Substrate
56
57. Wafer In
Hot Plate Spin Station
Stepper
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Track Robot
Developer Hot Plate
dispenser Track
57
58. Pre-bake and Primer Vapor
Coating
Hot Plate Spin Station
Stepper
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Track Robot
Developer Hot Plate
dispenser Track
58
59. Photoresist Spin Coating
Hot Plate Spin Station
Stepper
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Track Robot
Developer Hot Plate
dispenser Track
59
60. Soft Bake
Hot Plate Spin Station
Stepper
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Track Robot
Developer Hot Plate
dispenser Track
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61. Alignment and Exposure
Hot Plate Spin Station
Stepper
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Track Robot
Developer Hot Plate
dispenser Track
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62. Post Exposure Bake (PEB)
Hot Plate Spin Station
Stepper
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Track Robot
Developer Hot Plate
dispenser Track
62
63. Development
Hot Plate Spin Station
Stepper
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Track Robot
Developer Hot Plate
dispenser Track
63
64. Hard Bake
Hot Plate Spin Station
Stepper
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Track Robot
Developer Hot Plate
dispenser Track
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65. Wafer out
Hot Plate Spin Station
Stepper
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Track Robot
Developer Hot Plate
dispenser Track
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66. Resolution
• The achievable, repeatable
minimum feature size
• Determined by the wavelength of
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the light and the numerical
aperture of the system. The
resolution can be expressed as
66
67. Resolution
K1
R
NA
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• K1 is the system constant
is the wavelength of the light
NA = 2 ro/D, is the numerical aperture
67
68. Numerical Aperture
• NA is the ability of a lens to collect diffracted
light
• NA = 2 r0 / D
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– r0 : radius of the lens
– D = the distance of the object from the lens
• Lens with larger NA can capture higher order
of diffracted light and generate sharper image.
68
69. To Improve Resolution
• Increase NA
• Larger lens, could be too expensive and unpractical
• Reduce DOF and cause fabrication difficulties
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• Reduce wavelength
• Need develop light source, PR and equipment
• Limitation for reducing wavelength
• UV to DUV, to EUV, and to X-Ray
69
70. Depth of focus
• The range that light is in focus and can achieve good resolution of
projected image
• Depth of focus can be expressed as:
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K 2
DOF 2
2( NA)
70
71. Depth of Focus
• Smaller numerical aperture, larger DOF
• Disposable cameras with very small lenses
• Almost everything is in focus
• Bad resolution
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• Prefer reduce wavelength than increase NA to improve
resolution
• High resolution, small DOF
• Focus at the middle of PR layer
71
72. Photolithography
MASK ALLIGNER
Karl Suss MA-6 Mask Aligner
$69,000
Description
Can handle Si and Compound
semiconductor wafers
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Up to 6"in size
240 nm to 365 nm wavelength.
1:1 exposure system
Maximum wafer thickness:
4.3mm
Alignment accuracy of +-0.5um 72
73. Photolithography
MASK ALLIGNER
Mask-aligner EV-420
Description
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Contact mask-aligner for
optical lithography
Double side exposure
Lamp power: 350 W
Illumination spectrum: no
filters
73
74. Photolithography
MASK ALLIGNER
Manufacturer SussMicrotec
Model BLE RESPECT 600
Weight 880 lb (399 kg)
Accessories/ Other Specifications
400 V 16 A 50 Hz
System features
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Programmable controller
PC with windows NT4SP6 and
applications program Respect
1.0b0087/1.1b0002
Touch screen
RS 232 Interface
Vacuum monitoring
External cabinet exhaust
connection
Automatic exhaust control 74
Media control panel
Silicon and compound
semiconductor wafers
75. Photolithography
SPINNERS
Solitec 5100 LVT $30,000
•Provides spin processing of single wafers/substrates
of up to 225mm diagonal
•Tools for loading and centering for:
4 inch (100 mm) substrate
2 inch (50 mm) substrate
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Solitic is the main manufacturer of this equipment, Various models from the
same Company shown below
75
76. Photolithography
BAKE OVENS
Yes 450pb oven
Description:
The 450PB is a high temperature vacuum oven using a programmable temperature
controller and programmed vacuum and nitrogen flow cycles for curing of polyimide films.
The unit features filtered heated nitrogen purging from the entire surface of the roof
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through the floor of the chamber. This flow acts to clean the wafers during the process.
$22,500
Specs
Capacity: Up to two boats of 6
inch wafers
Ramp: 8°C/min
Cool-down: 1-2°C/min 76
Max Temperature: 400°C
Idle Temperature: 50°C
78. CHEMICAL VAPOR DESPOSITION
Chemical Vapor Deposition is the formation of a
non-volatile solid film on a substrate by the reaction
of vapor phase chemicals (reactants) that contain the
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required constituents.
78
79. CHEMICAL VAPOR DESPOSITION
• Gases to be reacted are entered into the CVD
chamber and react to produce the desired
material to be deposited on the wafer under
extremely high temperature.
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• Wafer temp is cooler than the furnace
• Changing the reacting gases we can produce any
material to be deposited
79
80. PECVD
• PECVD uses two electrodes one of which
contains the wafer
• A strong electric field b/w the electrodes ignites
the plasma which decomposes the reactant
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gases into the material to be deposited on the
wafer substrate.
80
81. SPUTTERING
• High energy plasma knocks metal atoms out of
its crystalline structure and are deposited on the
wafer substrate!
• Mainly used for
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creating metal
contacts (Aluminum,
Titanium etc)
81
82. SPUTTERING
PVD75 RF Sputterer
Description
•The RF sputterer can be used to deposit many dielectrics.
•Sputter two or more dissimilar materials simultaneously
•for complete control of film stoichiometry (co-deposition)
•Integrated touch screen control
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•Single substrate up to 12" diameter
•Multiple substrate up to 4" diameter
•Substrate fixture rotation up to 20rpm
$60,000
82
83. SPUTTERING
ARC-12M sputtering system
Gases available: Ar, O2 & N2
- DC sputtering power source: 2 x
250W $55,000
- RF sputtering power source: 600W at
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13.56MHz
- Chamber pressure: 5x10-6 torr
- Substrate size: 2”, 4” wafer or square
glass, or specimen
- Targets available: Ag, Al, Al/Si (1%), Au,
Cu, Cr, Hf, Mo, Pt, SnO2, SiN, Ti, TiW
83
http://www.mff.ust.hk/Eq_Sputter.htm
84. SPUTTERING
CVC DC Sputterer
Description
The DC sputterer is used to coat samples with metals. Metal coatings
are usually performed with this sputterer or with the CVC E-Beam
evaporator. -Process wafers/substrates up to 6" -Computer-controlled
planetary system for uniform deposition -Two 3" and two 8" sputter
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guns
Capabilities
Deposition - Metal Deposition - Aluminum
Chromium
- Copper
Gold
Iron
Nickel $55,000 to
Palladium 110,000 84
Platinum
Ruthenium
85. EVAPORATION
• Metal atom to be deposited are held in a
tungsten coil which carries huge currents
• The metal evaporates under intense heat and
finally deposits on a relatively cooler wafer.
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85
86. EPITAXIAL DEPOSITION
THERMAL EVAPORATORS
• Denton SJ20C
• SOURCE: University of UTAH
• Description
• 4 source hearth
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• Film thickness
monitor/deposition controller
$30,000
86
87. EPITAXIAL DEPOSITION
MOLECULAR BEAM EPITAXY
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http://department.fzu.cz/surfaces/mbe/soubory/mbe/mbe_method.htm
The MBE process during the epilayer growth on GaAs substrate.
Typical working temperatures of the effusion cells :
Ga ~1000oC, Al ~1100oC, As ~300oC, Be ~900oC, Si ~1100oC. 87
88. WET ETCHING
• Various mixtures of wet-chemical acid solutions are used
for wet etching.
• The primary acids used are sulphuric , hydrofluoric (HF),
hydrochloric (HCl) and phosphoric . As in silicon
processing, hydrogen peroxide is used with sulphuric
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acid, and ammonium hydroxide provides a caustic etch.
• A cyanide solution (sodium or potassium) is also used for
etching aluminium.
• As an alternative to wet etching, a plasma etching and
process is used.
• The reactor configurations and reactant gases are very
similar to those utilized in silicon device processing. 88
89. PLASMA ETCHING
• In this form of etching, plasma is used to
produce chemically reactive gases which are
then made to react with the material to be
etched on the wafer substrate!
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89
90. PLASMA ETCHING
OXFORD PLASMALAB 100
Oxford Plasmalab 100: Highly flexible plasma etcher to
selectively etch III-V group and metals on planar substrates
up to 200mm in diameter under variable temperatures.
Applications:
High-temperature InP etching
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Physical milling of most III-V semiconductors
Reactive etching of III-V semiconductors
Reactive etching of metals
Example Use:
III-V material and Metals etch
90
91. PLASMA ETCHING
OXFORD PLASMALAB 100
Oxford Plasmalab 100: Highly flexible plasma etcher to
selectively etch III-V group and metals on planar substrates
up to 200mm in diameter under variable temperatures.
Applications:
High-temperature InP etching
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Physical milling of most III-V semiconductors
Reactive etching of III-V semiconductors
Reactive etching of metals
Example Use: $29,000
III-V material and Metals etch
91
92. PLASMA ETCHING ICP
Metal Etcher-Unaxis SHUTTLELINE ICP
Chlorine-based system utilizing Boron
Trichloride and Chlorine to etch metals $120,000
and III-V group materials on planar
substrates up to 150mm in diameter.
ICP: 2.0 MHz 2500W
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RF: 13.56 MHz 300W
Gases: Cl2, Ar, BCl3, SF6, O2
Applications:
Anisotropic etching of metal films
Etches Chromium, Aluminum, and other
Chlorine-based etchable metals
Other materials etchable by SF6, Ar, and
O2 92
Demonstrated Use: Al, Cr and GaAs
quantum dots and SiC etch
93. PLASMA ETCHING
SAMCO RIE200iP
Manufacturer: SAMCO International
Classification: Dry Etch
Equipment: Inductively coupled plasma
etching
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Uses:
Etching of InP, GaAs, and other III-V
compounds, SiNx, SiO2, and photoresist
Etch gases Cl2, SiCl4, BCl3, Ar, CF4, CHF3,
and O2
http://www.princeton.edu/mnfl/the-tool-
list/samco-rie200ip/
93
94. EQUIPMENT
METROLOGY AND INSPECTION
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95. SURFACE PROFILER
Tencor Sono Gauge 300
For single point measurement of Wafer thickness,
Aluminum film thickness and Sheet resistance of metal film.
Wafer Diameter : 3”, 4”, 5” and 6”
Substrate Thickness : 250-700 μm
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Sheet Resistance : 1 to 1999 Ω/sq. $6,800
Minimum Metal Film Thickness : 100Å
95
96. PARAMETER ANALYSER
HP 4145B Semiconductor Parameter Analyzer
Specs
$4,500
• In/Out Ports : 8
• Source/Monitor Unit : 4
• Voltage Source : 2
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• Voltage Monitor : 2
• Voltage Resolution : 1 mV
• Current Resolution : 1 pA
• Maximum Voltage : 100 V
• Measurement Function : DC current through voltage-biased or
current-biased devices
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97. PROBE STATION
Signatone S-1160 Manual probe station
Specs
• Microscope of 10x to 70x magnification $5,500
• 4 Micropositioners in S-926 series
• X-Y-Z motion : 254 microns per knob revolution
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• Tip diameter : 4 microns
• Vacuum chuck
• Max. accept a 6”wafer
• Temperature from room temp.
to 300℃
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98. STRESS MEASUREMENT SYSTEM
Film Stress Measurement System SMSi 3800
Measure the change of curvature induced in a sample due to the
deposited film on a reflected substrate.
Measure 1-D stress and produce 3-D topographical profile
Specs
• Wafer size : 2” to 8”
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• Thickness Limit : less than 11 mm
• Statistical process control and spreadsheet compatibility
• Automatic segmentation calculation
$3,500
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99. WET BENCH
Amerimade 8ft Polypro Wet Bench
Construction: Polypro wet bench
- Length: 8ft $10,000
- Teflon Heated Bath Tanks (Qty 3):
a. can handle up to 6" wafers
b. Dims: 7"x10"x10" (WxDxH)
c. Immersion heater at bottom of tank
d. Temperature controllers for each tank
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- Teflon Static Bath Tank (Qty 1):
a. can handle up to 6" wafers
b. Dims: 7"x10"x10" (WxDxH)
c. Immersion heater at bottom of tank
d. Temperature controllers for each tank
- Teflon Rinse Sinks (Qty 2):
a. Dims: 5.5"x9"x5" (WxDxH)
DI Spray Gun
- 1 Amerimade Bath Timer 99
- 2 Photohelic Exhaust Monitors
- 5 Tank Fill Buttons
- 4 Alarm Buttons
100. WET BENCH
JST 4ft Stainless Steel Wet Bench
Model: JST STA00115
- Overall Length: 4ft
- Dimensions: 48"x50"x82" (LxWxH)
- All tanks sized for single 4"/100mm cassette
- All tanks programmed via PLC controller
- Automatic wafer handling (cassette) via robot
- Heated Recirculating Stainless Steel Tank:
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a. Tank is heated and recirculating
b. White Knight Pneumatic Pump
c. Tank Lid
d. Tank dimensions: 7.5"x7.25"x15" (LxWxH)
e. Condenser
- Quick Dump Rinse (QDR) Tank:
a. Dimensions: 7.5"x7.5"x5" (LxWxH) $10,000
b. Controlled via PLC controller
c. Tank Lid
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- Static Stainless Steel Tank:
a. Tank dimensions: 7.5" x 7.5" x 7" (LxWxH)
b. On/Off Drain
101. MICROSCOPES
AMERICAN OPTICAL STEREO ZOOM MICROSCOPE 7X - 42X
Unit Price $ 525.00
Number of Units 1
Manufacturer American Optical
Model 570
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Binocular Angle 45°
Eyepieces
Magnification 10 X
Magnification Range 7 X - 42 X
Zoom Range 0.7 X - 4.2 X
Illumination Type None
Stand Type None 101
Condition Very Good
$525
102. MICROSCOPES
OLYMPUS GSWH20X/12.5
Unit Price $ 3,000.00
Number of Units 1
Manufacturer Olympus
Model SZ1145 CHI
Binocular Angle 45°
Eyepieces
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Model GSWH20X/12.5
Magnification 20 X
Field Number 12 mm
Focusing YES
Magnification 36 X - 220 X
Range
Zoom Range 1.8 X - 11.0 X
Illumination Type Coaxial
Stand Type Incident Light (Type A)
102
$3000
103. • Shipment Cost
not included
Cost Model • Most
Equipment are
US $
350,750
used
• HR cost: US $ 14,000 / year
• Minimum Equipment cost: US $ 336,750
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